公开(公告)号：US20160013070A1

公开(公告)日：2016-01-14

申请号：US14656235

申请日：2015-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-yub JEON ,  Dong-chan KIM ,  Gyung-jin MIN ,  Jae-hong PARK ,  Je-woo HAN

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/768 ,  H01L21/033 ,  H01L21/3213

CPC classification number: H01L21/31144 ,  H01L21/02107 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76898

Abstract: A patterning method using a metal mask includes sequentially forming a lower metal layer and an upper metal layer on an etching object layer, forming an upper metal mask, forming the upper metal mask including patterning the upper metal layer, forming a lower metal mask, forming the lower metal mask including patterning the lower metal layer using the upper metal mask, and patterning the etching object layer using the upper metal mask.

Abstract translation: 使用金属掩模的图案化方法包括在蚀刻对象层上依次形成下金属层和上金属层，形成上金属掩模，形成包括图案化上金属层的上金属掩模，形成下金属掩模，形成 所述下金属掩模包括使用所述上金属掩模图案化所述下金属层，并且使用所述上金属掩模对所述蚀刻对象层进行图案化。

公开(公告)号：US20140038383A1

公开(公告)日：2014-02-06

申请号：US13957572

申请日：2013-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je-woo HAN ,  Jun-ho YOON ,  Dong-chan KIM ,  Gyung-jin MIN ,  Jae-hong PARK ,  Yong-moon JANG

IPC: H01L21/027 ,  H01L49/02

CPC classification number: H01L21/027 ,  G03F7/70633 ,  H01L23/544 ,  H01L27/10894 ,  H01L28/40 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor device includes providing a substrate that is divided into a first region on which a pattern layer is formed and a second region on which a photo key is formed. A silicon layer is formed on the first region and second region of the substrate. The silicon layer is patterned to form a hole exposing a photo key portion of the second region on which the photo key is formed. A buried oxide layer is formed to fill the hole exposing the photo key portion. The silicon layer is patterned by using the photo key formed under the buried oxide layer to form a silicon pattern layer.

Abstract translation: 制造半导体器件的方法包括提供被分成形成有图案层的第一区域和其上形成有光密钥的第二区域的衬底。 在衬底的第一区域和第二区域上形成硅层。 图案化硅层以形成露出其上形成有光钥匙的第二区域的光键部分的孔。 形成掩埋氧化物层以填充曝光照相键部分的孔。 通过使用形成在掩埋氧化物层下面的光密钥来形成硅层以形成硅图案层。

公开(公告)号：US20160293444A1

公开(公告)日：2016-10-06

申请号：US14961918

申请日：2015-12-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hong PARK ,  Jun-ho YOON ,  Je-woo HAN ,  Gyung-jin MIN ,  Dong-chan KIM ,  Kyung-yub JEON ,  Jin-young PARK

IPC: H01L21/311 ,  H01L21/3205

CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/76816

Abstract: A method of manufacturing a semiconductor device, the method including forming an insulating layer on a substrate; forming a metallic hardmask pattern on the insulating layer; forming a recess by partially etching the insulating layer; forming a metallic protection layer on an inner side wall of the recess; etching the insulating layer to form a hole that penetrates the insulating layer by using the metallic hardmask pattern and the metallic protection layer as etching masks; and removing the metallic hardmask pattern and the metallic protection layer.

Abstract translation: 一种制造半导体器件的方法，所述方法包括在衬底上形成绝缘层; 在绝缘层上形成金属硬掩模图案; 通过部分蚀刻绝缘层形成凹部; 在所述凹部的内侧壁上形成金属保护层; 通过使用金属硬掩模图案和金属保护层作为蚀刻掩模来蚀刻绝缘层以形成穿透绝缘层的孔; 并移除金属硬掩模图案和金属保护层。