公开(公告)号：US20210081204A1

公开(公告)日：2021-03-18

申请号：US16879120

申请日：2020-05-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNHO JEON ,  YOUNGJIN CHO ,  HEE HYUN NAM ,  HYO-DEOK SHIN

IPC: G06F9/30 ,  G06F9/54 ,  G06F12/02 ,  G06F1/08 ,  G06F1/12 ,  G06K9/62

Abstract: A memory module includes a device controller that communicates with a host device based on a first interface including a first clock signal, a first data signal, and a first data strobe signal and operates in one of a first operation mode or a second operation mode depending on an operation mode control value from the host device, and a memory device that communicates with the device controller based on a second interface including a second data signal and a second data strobe signal. The device controller includes a logic circuit that transmits a predetermined training result value to the host device depending on a training control value from the host device, when a training is performed on a third interface being a virtual interface recognized by the host device in the first operation mode.

公开(公告)号：US20170060416A1

公开(公告)日：2017-03-02

申请号：US15188183

申请日：2016-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGJIN CHO ,  HEE HYUN NAM ,  HYO-DEOK SHIN ,  JUNGHWAN RYU

IPC: G06F3/06 ,  G06F12/06

CPC classification number: G06F3/0659 ,  G06F3/0613 ,  G06F3/068 ,  G11C16/10

Abstract: A method of operating a memory module can include receiving, at the memory module, an active command and an associated row address that indicates that the active command is directed to a volatile memory device included in the memory module or to a non-volatile memory device included in the memory module. The volatile memory device or the non-volatile memory device can be activated based on the associated row address in response to the active command. Status information can be provided at the memory module indicating readiness of the memory module for receipt of an operation command associated with the active command and the associated row address

Abstract translation: 操作存储器模块的方法可以包括在存储器模块处接收活动命令和相关联的行地址，其指示活动命令被引导到包括在存储器模块中的易失性存储器装置或非易失性存储器装置 包含在内存模块中。 响应于活动命令，可以基于相关联的行地址来激活易失性存储器件或非易失性存储器件。 可以在存储器模块处提供状态信息，指示存储器模块的准备状态用于接收与活动命令相关联的操作命令和相关联的行地址

公开(公告)号：US20160358657A1

公开(公告)日：2016-12-08

申请号：US15083834

申请日：2016-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JINWOO KIM ,  SEONG YEON KIM ,  JAEGEUN PARK ,  HYO-DEOK SHIN ,  YOUNGGEUN LEE ,  YOUNGJIN CHO

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G11C7/1063

Abstract: A nonvolatile memory system includes first and second nonvolatile memory devices and a memory controller configured to control the first and second nonvolatile memory devices through one channel. During a program operation, the memory controller transmits first signals, for setting first page data up in the first nonvolatile memory device, to the first nonvolatile memory device through the channel. While the first nonvolatile memory device sets up the first page data in response to the first signals, the memory controller transmits second signals, for setting second page data up in the second nonvolatile memory device, to the second nonvolatile memory device.

Abstract translation: 非易失性存储器系统包括第一和第二非易失性存储器件以及被配置为通过一个通道来控制第一和第二非易失性存储器件的存储器控​​制器。 在程序操作期间，存储器控制器通过通道向第一非易失性存储器件发送用于将第一非易失性存储器件中的第一页数据向上设置的第一信号。 当第一非易失性存储装置响应于第一信号设置第一页数据时，存储器控制器将用于将第二页数据向上设置在第二非易失存储装置中的第二信号发送到第二非易失存储装置。