公开(公告)号：US10319735B2

公开(公告)日：2019-06-11

申请号：US15455667

申请日：2017-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk Koo Hong ,  Miyeong Kang ,  Hyosung Lee ,  Kyoungyong Cho ,  Bora Kim ,  Hyeji Kim ,  Sunkak Jo

IPC: H01L21/311 ,  H01L27/11582 ,  H01L21/28 ,  H01L27/11556 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

Abstract: Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.