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公开(公告)号:US11650502B2
公开(公告)日:2023-05-16
申请号:US16695569
申请日:2019-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD. , Dongjin Semichem Co., Ltd.
Inventor: Miyeong Kang , Sukkoo Hong , Hyereun Kim , Jihyun Kim , Hyunjin Kim , Hyojung Roh , Jongkyoung Park , Jungyoul Lee
CPC classification number: G03F7/091 , C08G18/3802 , C08G18/3819 , C08G18/792 , C09D175/04 , G03F7/038 , G03F7/039
Abstract: A polymer having a repeating unit represented by Formula 1:
wherein each of R1, R2, and R3 is independently selected from a substituted or unsubstituted C1-C6 chain-like saturated or unsaturated hydrocarbon group having 0 to 2 first heteroatoms or a substituted or unsubstituted C3-C6 cyclic saturated or unsaturated hydrocarbon group having 0 to 2 first heteroatoms, wherein at least one of R1, R2, and R3 is a hydrocarbon group substituted with a fluorine atom. R4 is a C1-C10 chain-like saturated or unsaturated hydrocarbon group having 0 to 2 second heteroatoms or a C3-C10 cyclic saturated or unsaturated hydrocarbon group having 0 to 2 second heteroatoms. R5 is a C1-C10 chain-like saturated or unsaturated hydrocarbon group having 1 to 6 third heteroatoms or a C3-C10 cyclic saturated or unsaturated hydrocarbon group having 1 to 6 third heteroatoms.-
公开(公告)号:US10381361B2
公开(公告)日:2019-08-13
申请号:US15455600
申请日:2017-03-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Suk Koo Hong , Miyeong Kang , Hyosung Lee , Kyoungyong Cho , Sunkak Jo
IPC: G03F7/00 , H01L27/11548 , H01L21/311 , H01L21/027 , H01L27/11556 , H01L27/11582 , H01L27/11575 , G03F7/038 , G03F7/40 , G03F7/004 , G03F7/039 , G03F7/075
Abstract: Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.
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公开(公告)号:US10319735B2
公开(公告)日:2019-06-11
申请号:US15455667
申请日:2017-03-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Suk Koo Hong , Miyeong Kang , Hyosung Lee , Kyoungyong Cho , Bora Kim , Hyeji Kim , Sunkak Jo
IPC: H01L21/311 , H01L27/11582 , H01L21/28 , H01L27/11556 , G03F7/039 , G03F7/075 , G03F7/09 , H01L21/027 , H01L27/11565 , H01L27/1157 , H01L27/11573 , H01L27/11575
Abstract: Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.
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