公开(公告)号：US11650502B2

公开(公告)日：2023-05-16

申请号：US16695569

申请日：2019-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Dongjin Semichem Co., Ltd.

Inventor： Miyeong Kang ,  Sukkoo Hong ,  Hyereun Kim ,  Jihyun Kim ,  Hyunjin Kim ,  Hyojung Roh ,  Jongkyoung Park ,  Jungyoul Lee

IPC: G03F7/09 ,  C08G18/79 ,  C08G18/38 ,  C09D175/04 ,  G03F7/039 ,  G03F7/038

CPC classification number: G03F7/091 ,  C08G18/3802 ,  C08G18/3819 ,  C08G18/792 ,  C09D175/04 ,  G03F7/038 ,  G03F7/039

Abstract: A polymer having a repeating unit represented by Formula 1:






wherein each of R1, R2, and R3 is independently selected from a substituted or unsubstituted C1-C6 chain-like saturated or unsaturated hydrocarbon group having 0 to 2 first heteroatoms or a substituted or unsubstituted C3-C6 cyclic saturated or unsaturated hydrocarbon group having 0 to 2 first heteroatoms, wherein at least one of R1, R2, and R3 is a hydrocarbon group substituted with a fluorine atom. R4 is a C1-C10 chain-like saturated or unsaturated hydrocarbon group having 0 to 2 second heteroatoms or a C3-C10 cyclic saturated or unsaturated hydrocarbon group having 0 to 2 second heteroatoms. R5 is a C1-C10 chain-like saturated or unsaturated hydrocarbon group having 1 to 6 third heteroatoms or a C3-C10 cyclic saturated or unsaturated hydrocarbon group having 1 to 6 third heteroatoms.

公开(公告)号：US10381361B2

公开(公告)日：2019-08-13

申请号：US15455600

申请日：2017-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk Koo Hong ,  Miyeong Kang ,  Hyosung Lee ,  Kyoungyong Cho ,  Sunkak Jo

IPC: G03F7/00 ,  H01L27/11548 ,  H01L21/311 ,  H01L21/027 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11575 ,  G03F7/038 ,  G03F7/40 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075

Abstract: Embodiments of the inventive concepts provide a method for manufacturing a semiconductor device. The method includes forming a stack structure including insulating layers and sacrificial layers which are alternately and repeatedly stacked on a substrate. A first photoresist pattern is formed on the stack structure. A first part of the stack structure is etched to form a stepwise structure using the first photoresist pattern as an etch mask. The first photoresist pattern includes a copolymer including a plurality of units represented by at least one of the following chemical formulas 1 to 3, wherein “R1”, “R2”, “R3”, “p”, “q” and “r” are the same as defined in the description.

公开(公告)号：US10319735B2

公开(公告)日：2019-06-11

申请号：US15455667

申请日：2017-03-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk Koo Hong ,  Miyeong Kang ,  Hyosung Lee ,  Kyoungyong Cho ,  Bora Kim ,  Hyeji Kim ,  Sunkak Jo

IPC: H01L21/311 ,  H01L27/11582 ,  H01L21/28 ,  H01L27/11556 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  H01L21/027 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

Abstract: Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.