公开(公告)号：US09293700B2

公开(公告)日：2016-03-22

申请号：US14301845

申请日：2014-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Su Ju ,  Min-Kyu Yang ,  Eun-Mi Kim ,  Seong-Geon Park

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/1253 ,  H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146

Abstract: According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film.

Abstract translation: 根据示例性实施例，非易失性存储单元包括第一电极和第二电极，第一电极和第二电极之间的电阻变化膜以及与第二电极接触的第一阻挡膜。 抗蚀剂改变膜含有氧离子并与第一电极接触。 第一阻挡膜被配置为减少（和/或阻挡）来自电阻变化膜的氧离子的流出。

公开(公告)号：US09269746B2

公开(公告)日：2016-02-23

申请号：US14323301

申请日：2014-07-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Woo Lee ,  Youn-Seon Kang ,  Jung-Moo Lee ,  Seung-Jae Jung ,  Hyun-Su Ju

IPC: H01L45/00 ,  H01L47/00 ,  H01L29/02 ,  H01L27/24

CPC classification number: H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616 ,  H01L45/1675

Abstract: A semiconductor device includes a first electrode on a substrate, a selection device pattern, a variable resistance layer pattern, a first protective layer pattern, a second protective layer pattern and a second electrode. The selection device pattern is wider, in a given direction, than the variable resistance layer pattern. The first protective layer pattern is formed on a first pair of opposite sides of the variable resistance layer pattern. The second protective layer pattern is formed on a second pair of opposite of the variable resistance layer pattern. The second electrode is disposed on the variable resistance layer pattern.

公开(公告)号：US09431458B2

公开(公告)日：2016-08-30

申请号：US14980247

申请日：2015-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Woo Lee ,  Youn-Seon Kang ,  Jung-Moo Lee ,  Seung-Jae Jung ,  Hyun-Su Ju

IPC: H01L47/00 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616 ,  H01L45/1675

Abstract: A semiconductor device includes a first electrode on a substrate, a selection device pattern, a variable resistance layer pattern, a first protective layer pattern, a second protective layer pattern and a second electrode. The selection device pattern is wider, in a given direction, than the variable resistance layer pattern. The first protective layer pattern is formed on a first pair of opposite sides of the variable resistance layer pattern. The second protective layer pattern is formed on a second pair of opposite of the variable resistance layer pattern. The second electrode is disposed on the variable resistance layer pattern.

Abstract translation: 半导体器件包括衬底上的第一电极，选择器件图案，可变电阻层图案，第一保护层图案，第二保护层图案和第二电极。 选择装置图案在给定方向上比可变电阻层图案更宽。 第一保护层图案形成在可变电阻层图案的第一对相对侧上。 第二保护层图案形成在可变电阻层图案的第二对相对的第二保护层图案上。 第二电极设置在可变电阻层图案上。