RESISTIVE MEMORY DEVICES AND METHODS OF CONTROLLING THE SAME
    2.
    发明申请
    RESISTIVE MEMORY DEVICES AND METHODS OF CONTROLLING THE SAME 有权
    电阻记忆体装置及其控制方法

    公开(公告)号:US20160155500A1

    公开(公告)日:2016-06-02

    申请号:US14830377

    申请日:2015-08-19

    Abstract: A method of controlling a resistive memory device includes: accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array; generating a first pulse power according to the accessed first pulse power specification; and performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power.

    Abstract translation: 控制电阻式存储器件的方法包括:访问满足存储单元阵列中包含的多个存储器单元中的至少第一个存储单元系数的第一脉冲功率规范; 根据所访问的第一脉冲功率规格产生第一脉冲功率; 以及使用所生成的第一脉冲功率对所述多个存储单元中的至少所述第一存储单元执行写入操作。

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