公开(公告)号：US20210366974A1

公开(公告)日：2021-11-25

申请号：US17398493

申请日：2021-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gang ZHANG ,  Shi Li QUAN ,  Hyung-yong KIM ,  Seug-gab PARK ,  In-gyu BAEK ,  Kyung-rae BYUN ,  Jin-yong CHOI

IPC: H01L27/146 ,  H04N5/335

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

公开(公告)号：US20160155500A1

公开(公告)日：2016-06-02

申请号：US14830377

申请日：2015-08-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Man CHANG ,  In-gyu BAEK ,  Sang-heon LEE ,  Hyun-sang HWANG

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0064 ,  G11C2013/0092

Abstract: A method of controlling a resistive memory device includes: accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array; generating a first pulse power according to the accessed first pulse power specification; and performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power.

Abstract translation: 控制电阻式存储器件的方法包括：访问满足存储单元阵列中包含的多个存储器单元中的至少第一个存储单元系数的第一脉冲功率规范; 根据所访问的第一脉冲功率规格产生第一脉冲功率; 以及使用所生成的第一脉冲功率对所述多个存储单元中的至少所述第一存储单元执行写入操作。

公开(公告)号：US20160099052A1

公开(公告)日：2016-04-07

申请号：US14724909

申请日：2015-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-kyu LEE ,  Yeong-taek LEE ,  Dae-seok BYEON ,  In-gyu BAEK ,  Man CHANG ,  Lijie ZHANG

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C7/04 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2013/0088 ,  G11C2013/0092

Abstract: A method for operating a memory device includes sensing a temperature of the resistive memory device, setting a level of a set voltage or current for writing to a memory cell based on the temperature, setting a level of a reset voltage for reset writing to the memory cell based on the temperature, and performing a write operation on the memory cell based on the level of the set voltage or current and the level of the reset voltage. The memory device may be a resistive memory device.

Abstract translation: 一种用于操作存储器件的方法包括：感测电阻性存储器件的温度，根据温度设置用于写入存储器单元的设定电压或电流的电平，设置用于复位写入的复位电压的电平到存储器 基于温度，并且基于设定电压或电流的电平以及复位电压的电平对存储器单元执行写入操作。 存储器件可以是电阻式存储器件。

公开(公告)号：US20160099049A1

公开(公告)日：2016-04-07

申请号：US14796131

申请日：2015-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-kyu LEE ,  Yeong-taek LEE ,  Dae-seok BYEON ,  In-gyu BAEK ,  Man CHANG ,  Lijie ZHANG ,  Hyun-kook PARK

IPC: G11C13/00 ,  G11C11/56

CPC classification number: G11C13/004 ,  G11C7/04 ,  G11C11/1673 ,  G11C11/5607 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0064 ,  G11C2013/0054

Abstract: A method for operating a memory device includes sensing a change in temperature of the memory device, adjusting a level of a reference current for a read operation, and reading data from memory cells of the memory device based on the adjusted level of the reference current. The level of the reference current is adjusted from a reference value to a first value when the temperature of the memory device increases and is adjusted from the reference value to a second value when the temperature of the memory device decreases. A difference between the reference value and the first value is different from a difference the reference value and the second value.

Abstract translation: 用于操作存储器件的方法包括：检测存储器件的温度变化，调整读取操作的参考电流的电平，以及基于调节的参考电流的电平从存储器件的存储器单元读取数据。 当存储器件的温度升高时，将参考电流的电平从参考值调整到第一值，并且当存储器件的温度降低时，将参考电流的电平从参考值调整到第二值。 参考值和第一值之间的差异与参考值和第二值的差异不同。