Abstract:
A semiconductor device includes a first semiconductor structure, and a second semiconductor structure on the first semiconductor structure. The second semiconductor structure includes a substrate having first and second regions, gate electrodes spaced apart from each other on the first region, extending by different lengths and respectively including a pad region having an upper surface exposed upwardly, interlayer insulating layers alternately stacked with the gate electrodes, channel structures penetrating through the gate electrodes, gate contact plugs penetrating through the pad region of each of the gate electrodes and extending into the first semiconductor structure, and an insulating structure alternating with the interlayer insulating layers below each of the pad regions and surrounding the gate contact plugs. The insulating structure includes a first insulating layer and a second insulating layer surrounding at least a portion of the first insulating layer and including a material different from any of the first insulating layer.
Abstract:
A method and apparatus for processing biometric information in an electronic device including a processor that operates at a normal mode or at a secure mode, the method comprising, detecting a biometric input event from a biometric sensor module at normal mode, creating biometric data based on sensed data from the biometric sensor module at the secure mode, performing biometric registration or biometric authentication based on the created biometric data at the secure mode, and providing result information of biometric registration or biometric authentication at the normal mode.
Abstract:
A radio frequency (RF) power monitoring device includes an RF sensor to monitor RF power transferred to a target load and an impedance of the target load and a transmission line to electrically connect the RF sensor to the target load and to transfer the RF power to the target load. A phase (φz) of the impedance of the target load is adjusted to satisfy a range of −30°+180°*n
Abstract:
A method and apparatus for processing biometric information in an electronic device including a processor that operates at a normal mode or at a secure mode, the method comprising, detecting a biometric input event from a biometric sensor module at normal mode, creating biometric data based on sensed data from the biometric sensor module at the secure mode, performing biometric registration or biometric authentication based on the created biometric data at the secure mode, and providing result information of biometric registration or biometric authentication at the normal mode.
Abstract:
A method and apparatus for processing biometric information in an electronic device including a processor that operates at a normal mode or at a secure mode, the method comprising, detecting a biometric input event from a biometric sensor module at normal mode, creating biometric data based on sensed data from the biometric sensor module at the secure mode, performing biometric registration or biometric authentication based on the created biometric data at the secure mode, and providing result information of biometric registration or biometric authentication at the normal mode.
Abstract:
A plasma processing apparatus capable of adjusting a processing rate (e.g., etching or deposition rate) of a sample locally by adjusting a plasma density may be provided. For example, the plasma processing apparatus may include a processing chamber, an antenna coil inside the processing chamber to generate magnetic field, and a magnetic field blocking member configured to block the magnetic field generated at the antenna coil such that an intensity of the magnetic field is controlled by adjusting a gap distance between the magnetic field blocking member and the antenna coil. According to the plasma processing apparatus, an asymmetric etching of the sample can be minimized.
Abstract:
A semiconductor device includes a plate layer, gate electrodes on the plate layer, interlayer insulating layers that are alternately stacked with the gate electrodes, and channel structure that extends into the gate electrodes, where the channel structure includes a channel filling layer, a channel layer that at least partially surrounds the channel filling layer, charge storage layers between the gate electrodes and the channel layer, a first dielectric layer between the gate electrodes and the charge storage layers, and a second dielectric layer between the channel layer and the charge storage layers, where the channel layer includes first convex portions that extend toward the channel filling layer from a side surface of the channel layer that contacts the channel filling layer, and where vertices of the first convex portions are at first levels in the first direction that are between each level of a pair of adjacent gate electrodes.
Abstract:
A method of manufacturing a semiconductor device includes forming a molded structure of stacked and alternating interlayer insulating layers and sacrificial layers on a lower structure, forming a hole through the molded structure, forming recess regions in the sacrificial layers of the molded structure, respectively, by removing a portion of the sacrificial layers, exposed through the hole, from side surfaces of the sacrificial layers, sequentially forming a preliminary blocking pattern and a charge storage pattern in each of the recess regions, sequentially forming a tunneling layer and a channel layer in the hole, forming trenches penetrating through the molded structure, such that the trenches extend in a line shape, removing the sacrificial layers exposed by the trenches, such that the preliminary blocking pattern is exposed, and oxidizing the preliminary blocking pattern, after removing the sacrificial layers, such that a blocking pattern is formed.
Abstract:
A substrate processing apparatus and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a processing chamber; a boat configured to stack substrates; a gas nozzle including a nozzle region and a fastening region; a gas inlet including an insert portion; and an adapter coupling the gas inlet and the gas nozzle. The fastening region includes a first lower region; and a second lower region having a protruding portion protruding outwardly from an outer side surface of the first lower region. The adapter includes a lower pedestal; a lower fastening portion on the lower pedestal and contacting at least a lower surface of the protruding portion; a gasket between a portion of the lower pedestal and a portion of the lower fastening portion; an upper fastening portion contacting at least an upper surface of the protruding portion; a hole passing through the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion; and a fastening unit coupling the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion through the hole.
Abstract:
A method and apparatus for processing biometric information in an electronic device including a processor that operates at a normal mode or at a secure mode, the method comprising, detecting a biometric input event from a biometric sensor module at normal mode, creating biometric data based on sensed data from the biometric sensor module at the secure mode, performing biometric registration or biometric authentication based on the created biometric data at the secure mode, and providing result information of biometric registration or biometric authentication at the normal mode.