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    SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
    1.
    发明公开
    SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME 审中-公开

    公开(公告)号：US20230223345A1

    公开(公告)日：2023-07-13

    申请号：US17959780

    申请日：2022-10-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sangsoo LEE ,  Hyungjoon KIM ,  Eunhyun KIM ,  Hyunggon SHIN

    IPC: H01L23/535 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

    CPC classification number: H01L23/535 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

    Abstract: A semiconductor device includes a first semiconductor structure, and a second semiconductor structure on the first semiconductor structure. The second semiconductor structure includes a substrate having first and second regions, gate electrodes spaced apart from each other on the first region, extending by different lengths and respectively including a pad region having an upper surface exposed upwardly, interlayer insulating layers alternately stacked with the gate electrodes, channel structures penetrating through the gate electrodes, gate contact plugs penetrating through the pad region of each of the gate electrodes and extending into the first semiconductor structure, and an insulating structure alternating with the interlayer insulating layers below each of the pad regions and surrounding the gate contact plugs. The insulating structure includes a first insulating layer and a second insulating layer surrounding at least a portion of the first insulating layer and including a material different from any of the first insulating layer.

    PLASMA PROCESSING APPARATUS
    6.
    发明申请
    PLASMA PROCESSING APPARATUS 审中-公开
    等离子体加工设备

    公开(公告)号：US20130160950A1

    公开(公告)日：2013-06-27

    申请号：US13724794

    申请日：2012-12-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyungjoon KIM ,  Sangheon LEE ,  Sang Jean JEON ,  Ji Myoung LEE ,  Yunkwang JEON

    IPC: H05H1/46

    CPC classification number: H05H1/46 ,  H05H2001/4667

    Abstract: A plasma processing apparatus capable of adjusting a processing rate (e.g., etching or deposition rate) of a sample locally by adjusting a plasma density may be provided. For example, the plasma processing apparatus may include a processing chamber, an antenna coil inside the processing chamber to generate magnetic field, and a magnetic field blocking member configured to block the magnetic field generated at the antenna coil such that an intensity of the magnetic field is controlled by adjusting a gap distance between the magnetic field blocking member and the antenna coil. According to the plasma processing apparatus, an asymmetric etching of the sample can be minimized.

    Abstract translation: 可以提供能够通过调节等离子体密度来局部调整样品的处理速度（例如蚀刻或沉积速率）的等离子体处理装置。 例如，等离子体处理装置可以包括处理室，处理室内的天线线圈以产生磁场;以及磁阻挡部件，被配置为阻挡在天线线圈处产生的磁场，使得磁场强度 通过调整磁场阻挡构件和天线线圈之间的间隙距离来控制。 根据等离子体处理装置，可以使样品的非对称蚀刻最小化。

    SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME 有权

    公开(公告)号：US20240373635A1

    公开(公告)日：2024-11-07

    申请号：US18587785

    申请日：2024-02-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dongsung CHOI ,  Byongju KIM ,  Hyungjoon KIM

    IPC: H10B43/27 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35

    Abstract: A semiconductor device includes a plate layer, gate electrodes on the plate layer, interlayer insulating layers that are alternately stacked with the gate electrodes, and channel structure that extends into the gate electrodes, where the channel structure includes a channel filling layer, a channel layer that at least partially surrounds the channel filling layer, charge storage layers between the gate electrodes and the channel layer, a first dielectric layer between the gate electrodes and the charge storage layers, and a second dielectric layer between the channel layer and the charge storage layers, where the channel layer includes first convex portions that extend toward the channel filling layer from a side surface of the channel layer that contacts the channel filling layer, and where vertices of the first convex portions are at first levels in the first direction that are between each level of a pair of adjacent gate electrodes.

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
    8.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20230123932A1

    公开(公告)日：2023-04-20

    申请号：US17959365

    申请日：2022-10-04

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eunyeoung CHOI ,  Joonam KIM ,  Hyungjoon KIM ,  Donghwa LEE ,  Dongsung CHOI

    IPC: H01L27/11556

    Abstract: A method of manufacturing a semiconductor device includes forming a molded structure of stacked and alternating interlayer insulating layers and sacrificial layers on a lower structure, forming a hole through the molded structure, forming recess regions in the sacrificial layers of the molded structure, respectively, by removing a portion of the sacrificial layers, exposed through the hole, from side surfaces of the sacrificial layers, sequentially forming a preliminary blocking pattern and a charge storage pattern in each of the recess regions, sequentially forming a tunneling layer and a channel layer in the hole, forming trenches penetrating through the molded structure, such that the trenches extend in a line shape, removing the sacrificial layers exposed by the trenches, such that the preliminary blocking pattern is exposed, and oxidizing the preliminary blocking pattern, after removing the sacrificial layers, such that a blocking pattern is formed.

    BATCH TYPE SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    9.
    发明申请
    BATCH TYPE SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 有权

    公开(公告)号：US20230054580A1

    公开(公告)日：2023-02-23

    申请号：US17826901

    申请日：2022-05-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sangyub IE ,  Hyungjoon KIM ,  Minju LEE ,  Eunyeoung CHOI

    IPC: C23C16/455 ,  H01L21/02

    Abstract: A substrate processing apparatus and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a processing chamber; a boat configured to stack substrates; a gas nozzle including a nozzle region and a fastening region; a gas inlet including an insert portion; and an adapter coupling the gas inlet and the gas nozzle. The fastening region includes a first lower region; and a second lower region having a protruding portion protruding outwardly from an outer side surface of the first lower region. The adapter includes a lower pedestal; a lower fastening portion on the lower pedestal and contacting at least a lower surface of the protruding portion; a gasket between a portion of the lower pedestal and a portion of the lower fastening portion; an upper fastening portion contacting at least an upper surface of the protruding portion; a hole passing through the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion; and a fastening unit coupling the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion through the hole.

    METHOD AND APPARATUS FOR PROCESSING BIOMETRIC INFORMATION IN ELECTRONIC DEVICE
    10.
    发明申请
    METHOD AND APPARATUS FOR PROCESSING BIOMETRIC INFORMATION IN ELECTRONIC DEVICE 有权
    用于处理电子设备中生物信息的方法和装置

    公开(公告)号：US20150235055A1

    公开(公告)日：2015-08-20

    申请号：US14619731

    申请日：2015-02-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Teain AN ,  Taeho KIM ,  Hyungjoon KIM ,  Seulhan PARK ,  Jonghoon PARK ,  Heejun YOU ,  Yangsoo LEE ,  Moonsu CHANG ,  Jinho HYEON

    IPC: G06F21/74 ,  G06F21/32

    CPC classification number: G06F21/74 ,  G06F21/32

    Abstract: A method and apparatus for processing biometric information in an electronic device including a processor that operates at a normal mode or at a secure mode, the method comprising, detecting a biometric input event from a biometric sensor module at normal mode, creating biometric data based on sensed data from the biometric sensor module at the secure mode, performing biometric registration or biometric authentication based on the created biometric data at the secure mode, and providing result information of biometric registration or biometric authentication at the normal mode.

    Abstract translation: 一种用于处理电子设备中的生物特征信息的方法和装置，包括在正常模式或安全模式下操作的处理器，所述方法包括：在正常模式下从生物特征传感器模块检测生物特征输入事件，基于 在安全模式下来自生物特征传感器模块的感测数据，在安全模式下，基于所创建的生物特征数据执行生物特征注册或生物认证，以及在正常模式下提供生物特征注册或生物认证的结果信息。

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