公开(公告)号：US09230922B2

公开(公告)日：2016-01-05

申请号：US14180907

申请日：2014-02-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Jin Lim ,  Bong-Hyun Kim ,  Seok-Woo Nam ,  Dong-Woon Shin ,  In-Sang Jeon ,  Soo-Jin Hong

IPC: H01L21/31 ,  H01L23/00 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L29/51 ,  H01L29/165

CPC classification number: H01L23/564 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28194 ,  H01L23/562 ,  H01L29/165 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A precursor composition for forming a silicon dioxide film on a substrate, the precursor composition including at least one precursor compound represented by the following chemical formulas (1), (2), and (3): HxSiAy(NR1R2)4-x-y  (1) HxSi(NAR3)4-x  (2) HxSi(R4)z(R5)4-x-z  (3) wherein, independently in the chemical formulas (1), (2), and (3), H is hydrogen, x is 0 to 3, Si is silicon, A is a halogen, y is 1 to 4, N is nitrogen, and R1, R2, R3, and R5 are each independently selected from the group of H, aryl, perhaloaryl, C1-8 alkyl, and C1-8 perhaloalkyl, and R4 is aryl in which at least one hydrogen is replaced with a halogen or C1-8 alkyl in which at least one hydrogen is replaced with a halogen.

Abstract translation: 一种用于在基底上形成二氧化硅膜的前体组合物，所述前体组合物包含至少一种由以下化学式（1），（2）和（3）表示的前体化合物：HxSiAy（NR1R2）4-xy（1 ）其中独立地在化学式（1），（2）和（3）中，H是氢，x，x，x，x，y， 为0〜3，Si为硅，A为卤素，y为1〜4，N为氮，R1，R2，R3，R5各自独立地选自H，芳基，全卤代芳基，C1-8 烷基和C 1-8全卤代烷基，R 4是其中至少一个氢被卤素取代的芳基或其中至少一个氢被卤素取代的C 1-8烷基。