公开(公告)号：US20200343364A1

公开(公告)日：2020-10-29

申请号：US16572681

申请日：2019-09-17

申请人： Samsung Electronics Co., Ltd.

发明人： Donghyun KIM ,  Inhyun SONG ,  Yeongmin JEON ,  Sejin PARK ,  Juyun PARK ,  Jonghoon BAEK ,  Taeyeon SHIN ,  Sooyeon JEONG

IPC分类号： H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/78

摘要： A semiconductor device may include: a dummy gate structure including a first gate pattern in which dummy gate lines extending in one direction are connected to each other on a substrate, and a second gate pattern in which dummy gate lines extending in the one direction are connected to each other on the same line with the first gate pattern; and a third gate pattern extending in parallel with the dummy gate structure on one side of the dummy gate structure.

公开(公告)号：US20240321884A1

公开(公告)日：2024-09-26

申请号：US18442590

申请日：2024-02-15

申请人： Samsung Electronics Co., Ltd.

发明人： Inhyun SONG ,  Junggil YANG ,  Sangmoon LEE ,  Myunggil KANG ,  Jongsu KIM ,  Beomjin PARK

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L27/092 ,  H01L21/823807 ,  H01L21/823842 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

摘要： Provided is a semiconductor device including a substrate, a fin-type active region protruding on the substrate, a channel region on the fin-type active region and including a plurality of active patterns extending in a first horizontal direction and a semiconductor material layer, a gate line extending in a second horizontal direction that is perpendicular to the first horizontal direction and covering the channel region on the fin-type active region, and a pair of source/drain regions at both sides of the gate line on the fin-type active region, wherein a work function of the semiconductor material layer is different from a work function of the plurality of active patterns, the semiconductor material layer surrounds portions of the gate line between the plurality of active patterns, and the gate line is separated from the pair of source/drain regions with the semiconductor material layer therebetween.

公开(公告)号：US20230298945A1

公开(公告)日：2023-09-21

申请号：US17961172

申请日：2022-10-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Junggil YANG ,  Inhyun SONG ,  Jooho JUNG

IPC分类号： H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823878

摘要： A semiconductor device may include first and second channel patterns, which are provided on first and second active patterns, respectively, and include first semiconductor patterns and second semiconductor patterns, respectively, and a gate electrode crossing over the first and second channel patterns in a first direction. The gate electrode may include first and second outer gate electrodes, which are provided on the uppermost ones of the first and second semiconductor patterns, respectively, and each of which includes a first metal pattern, a second metal pattern thinner than the first metal pattern, and a filling metal pattern sequentially stacked. A third metal pattern may be further provided between the first metal pattern and the first semiconductor patterns. The third and second metal patterns may include p- and n-type work function metals, respectively. The first and second metal patterns of the second outer gate electrode may have coplanar topmost surfaces.