公开(公告)号：US20160203996A1

公开(公告)日：2016-07-14

申请号：US15074290

申请日：2016-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KANGMIN JEON ,  KYUNG-SUN KIM ,  DOUGYONG SUNG ,  TAE-HWA KIM ,  HEUNGSIK PARK ,  JUNG MIN KIM

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32889 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11582

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Abstract translation: 提供了一种基板制造方法和用于其的基板制造装置。 衬底制造方法包括将具有掩模膜的衬底提供到腔室中。 在室中诱导等离子体反应。 交替地将第一气体和第二气体提供到腔室中以蚀刻衬底。 第一和第二气体中的每一个以包括方波形状的压力波动分布的稳定的进料压力被提供到室中。