Semiconductor device including fin field effect transistor

    公开(公告)号:US11289478B2

    公开(公告)日:2022-03-29

    申请号:US16382439

    申请日:2019-04-12

    Abstract: A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern and the second gate pattern being spaced apart from each other, and a separation pattern that separates the first gate pattern and the second gate pattern from each other. The first gate pattern includes a first high-k dielectric pattern and a first metal-containing pattern on the first high-k dielectric pattern, the first metal-containing pattern covering a sidewall of the first high-k dielectric pattern. The second gate pattern includes a second high-k dielectric pattern and a second metal-containing pattern on the second high-k dielectric pattern, and the separation pattern is in direct contact with the first metal-containing pattern and spaced apart from the first high-k dielectric pattern.

    DEVICE AND METHOD FOR CHANNEL FORECAST IN WIRELESS COMMUNICATION SYSTEM

    公开(公告)号:US20210006989A1

    公开(公告)日:2021-01-07

    申请号:US16918420

    申请日:2020-07-01

    Abstract: The disclosure relates to a pre-5th-generation (5G) or 5G communication system to be provided for supporting higher data rates beyond 4th-generation (4G) communication system such as long term evolution (LTE). The method includes identifying whether a channel forecast value is valid, the channel forecast value being acquired based on applying a learning algorithm to an input comprising channel values estimated based on first reference signals (RSs) received from a base station, transmitting, to the base station, an RS request message for requesting an update of the learning algorithm, based on the determining that the channel forecast value is invalid, receiving, from the base station, second RSs of an RS density determined based on the RS request message, generating an updated learning algorithm based on channel values estimated from the second RSs, and transmitting channel forecast information acquired based on the updated learning algorithm to the base station.

    Method and apparatus for transmitting or receiving signals in wireless communication system

    公开(公告)号:US11070269B2

    公开(公告)日:2021-07-20

    申请号:US16944017

    申请日:2020-07-30

    Abstract: Provided are a method and apparatus for transmitting or receiving signals in a wireless communication system. An electronic device in the wireless communication system includes: a transceiver; and at least one processor, wherein the transceiver comprises an antenna module and a metasurface module, wherein the antenna module comprises a plurality of antennas, wherein the at least one processor is configured to generate first beams for the plurality of antennas, transmit the first beams to the metasurface module from the plurality of antennas, generate second beams based on the first beams through the metasurface module, and transmit the second beams to another electronic device, and wherein the metasurface module is arranged to receive the first beams generated for the plurality of antennas.

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20200083220A1

    公开(公告)日:2020-03-12

    申请号:US16382439

    申请日:2019-04-12

    Abstract: A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern and the second gate pattern being spaced apart from each other, and a separation pattern that separates the first gate pattern and the second gate pattern from each other. The first gate pattern includes a first high-k dielectric pattern and a first metal-containing pattern on the first high-k dielectric pattern, the first metal-containing pattern covering a sidewall of the first high-k dielectric pattern. The second gate pattern includes a second high-k dielectric pattern and a second metal-containing pattern on the second high-k dielectric pattern, and the separation pattern is in direct contact with the first metal-containing pattern and spaced apart from the first high-k dielectric pattern.

    Method and apparatus for supporting full duplex operation in wireless communication system

    公开(公告)号:US12120068B2

    公开(公告)日:2024-10-15

    申请号:US17604262

    申请日:2020-04-08

    CPC classification number: H04L5/1461 H04L5/16

    Abstract: The present disclosure relates to a communication technique for converging an IoT technology with a 5G communication system for supporting a higher data transfer rate beyond the 4G system, and a system therefor. The present disclosure may be applied to intelligent services (for example, smart homes, smart buildings, smart cities, smart cars or connected cars, health care, digital education, retail, security- and safety-related services, etc.) on the basis of 5G communication and IoT-related technologies. The present invention provides an apparatus and a method for supporting a full duplex operation in a wireless communication system.

    Method and apparatus for transmitting and receiving signal in a wireless communication system

    公开(公告)号:US11545759B2

    公开(公告)日:2023-01-03

    申请号:US16996700

    申请日:2020-08-18

    Abstract: A method and apparatus for transceiving a signal in a wireless communication system is provided. A base station for transceiving a signal in a wireless communication system includes a transceiver and at least one processor. The transceiver includes an antenna unit and a metamaterial unit. The metamaterial unit includes a metamaterial lens unit and a metamaterial lens controller, and the at least one processor is configured to generate a first beam via hybrid beamforming in the antenna unit; transmit the generated first beam to the metamaterial lens unit, generate a second beam from the first beam, by adjusting the metamaterial lens unit, based on a control signal generated by the metamaterial lens controller, and transmit a downlink signal to a terminal by using the generated second beam.

    INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20200381432A1

    公开(公告)日:2020-12-03

    申请号:US16718799

    申请日:2019-12-18

    Abstract: An integrated circuit semiconductor device includes a first region including a first transistor and a second region in contact with the first region in a second direction. The first transistor includes a first active fin extending in a first direction, a first gate dielectric layer extending from the first active fin onto a first isolation layer in the second direction, and a first gate electrode on the first gate dielectric layer. The second region includes a second transistor including a second active fin extending in the first direction, a second gate dielectric layer extending from the second active fin onto a second isolation layer in the second direction, and a second gate electrode on the second gate dielectric layer. The integrated circuit semiconductor device includes a gate dielectric layer removal region proximate a boundary between the first region and the second region.

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