公开(公告)号：US09530573B2

公开(公告)日：2016-12-27

申请号：US13954219

申请日：2013-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION

Inventor： Jong Jin Park ,  Ji-hyun Bae ,  Dae Joon Kang

IPC: H01G11/26 ,  H01G11/36 ,  H01G11/40 ,  B82Y99/00 ,  H01G11/28

CPC classification number: H01G11/36 ,  B82Y99/00 ,  H01G11/26 ,  H01G11/28 ,  H01G11/40 ,  Y02E60/13 ,  Y02T10/7022

Abstract: The electrode structure includes: a textile-type conductive substrate; a first layer which is disposed on the textile-type conductive substrate and includes a plurality of one-dimensional nanostructures; and a second layer which is formed on the first layer and includes a graphene material.

Abstract translation: 电极结构包括：纺织型导电性基板; 第一层，其设置在所述纺织品型导电性基板上并且包括多个一维纳米结构体; 以及形成在第一层上并包括石墨烯材料的第二层。

公开(公告)号：US09752941B2

公开(公告)日：2017-09-05

申请号：US14018505

申请日：2013-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Sungkyunkwan University Foundation for Corporate Collaboration

Inventor： Sang-hun Jeon ,  Jong-jin Park ,  Thanh Tien Nguyen ,  Ji-hyun Bae ,  Kyung-eun Byun ,  Nae-eung Lee ,  Do-il Kim ,  Quang Trung Tran

IPC: G01L1/16 ,  H01L29/84

CPC classification number: G01L1/16 ,  H01L29/84

Abstract: A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.

公开(公告)号：US09496494B2

公开(公告)日：2016-11-15

申请号：US14096448

申请日：2013-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-hun Jeon ,  Jong-jin Park ,  Ji-hyun Bae

IPC: H01L29/792 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/16

Abstract: Provided is a memory device formed on a fiber. The memory device includes a lower electrode, a memory resistance layer, and an upper electrode, which are sequentially formed on a surface of the fiber. The memory resistance layer may have variable resistance properties. The memory device may further include an intermediate electrode and a switching layer formed between the memory resistance layer and the upper electrode.

Abstract translation: 提供了一种形成在光纤上的存储器件。 存储器件包括依次形成在光纤表面上的下电极，存储电阻层和上电极。 记忆电阻层可具有可变电阻特性。 存储器件还可以包括形成在存储电阻层和上电极之间的中间电极和开关层。

公开(公告)号：US09425320B2

公开(公告)日：2016-08-23

申请号：US14189494

申请日：2014-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chwee Iin Choong ,  Sang-won Kim ,  Jong-jin Park ,  Ji-hyun Bae ,  Jung-kyun Im ,  Sang-hun Jeon

IPC: H01L29/76 ,  H01L29/786 ,  H01L29/66 ,  H01L51/05 ,  H01L29/06

CPC classification number: H01L29/78603 ,  H01L29/0669 ,  H01L29/66742 ,  H01L51/0558

Abstract: Provided is a thin film transistor on fiber and a method of manufacturing the same. The thin film transistor includes a fiber; a first electrode, a second electrode and a gate electrode formed on fiber; a channel formed between the first and second electrodes; an encapsulant encapsulating the fiber, the first, second, and gate electrodes, and an upper surface of the channel; and a gate insulating layer formed in a portion of the inner area of the encapsulant.

Abstract translation: 提供了一种光纤上的薄膜晶体管及其制造方法。 薄膜晶体管包括光纤; 形成在纤维上的第一电极，第二电极和栅电极; 形成在第一和第二电极之间的通道; 封装光纤，第一，第二和栅电极以及通道的上表面的密封剂; 以及形成在所述密封剂的内部区域的一部分中的栅极绝缘层。

公开(公告)号：US09287487B2

公开(公告)日：2016-03-15

申请号：US13778750

申请日：2013-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-hyun Bae ,  Jong Jin Park ,  Sang-hun Jeon ,  Burak Guzelturk

IPC: H02N2/18 ,  H01L41/113 ,  H01L41/047 ,  B82Y99/00 ,  H01L41/18 ,  H01L41/193

CPC classification number: H01L41/0477 ,  B82Y99/00 ,  H01L41/113 ,  H01L41/183 ,  H01L41/193 ,  Y10S977/948

Abstract: A textile-based stretchable energy generator is provided. The energy generator includes: flexible and stretchable first and second electrode substrates; and an energy generation layer, which is provided between the first and second electrode substrates and includes a dielectric elastomer for generating electrical energy from a transformation thereof.

Abstract translation: 提供了一种基于纺织品的可拉伸能量发生器。 能量发生器包括：柔性和可拉伸的第一和第二电极基板; 以及能量产生层，其设置在第一和第二电极基板之间，并且包括用于从其变换产生电能的介电弹性体。