Abstract:
Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.
Abstract:
An extreme ultraviolet generation device, including a chamber with an internal space; a plasma generator to generate plasma in the internal space; a condenser in the internal space to gather light generated from the plasma; and a monitor to monitor the internal space in an omnidirectional manner.
Abstract:
A three dimensional (“3D”) secondary battery includes an electrolyte layer and an anode active material layer that are sequentially stacked on a plurality of first trenches that are provided in a cathode active material layer where, in the anode active material layer, a plurality of second trenches having similar shape to that of the first trenches is provided and the plurality of second trenches are filled with an elastic member and where the elastic member absorbs expansion of the anode active material layer during charging and discharging the 3D secondary battery, and thus, the degradation of the 3-dimensional secondary battery is prevented.