公开(公告)号：US20230411157A1

公开(公告)日：2023-12-21

申请号：US18136407

申请日：2023-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungkyo Lee ,  Jongin Kang ,  Gyeyoung Kim ,  Youngwoo Kim ,  Yonghan Park ,  Woojin Jung ,  Seunguk Han ,  Juyoung Huh

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  H01L23/16 ,  H01L23/544

CPC classification number: H01L21/0337 ,  H01L21/0271 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/0228 ,  H01L23/16 ,  H01L23/544

Abstract: A method of manufacturing a semiconductor device includes: forming a mask layer, a first separation layer, a first mandrel layer, a second separation layer and a second mandrel layer on a substrate; patterning the second mandrel layer to form second mandrel patterns; forming first spacers on the second mandrel patterns; removing the second mandrel patterns; patterning the second separation layer and the first mandrel layer to form first structures; forming a second spacer layer on the first structures and the first separation layer; anisotropically etching the second spacer layer to form second spacers on the first structures, and to form first dummy patterns and align key patterns on the first structures; and spin-coating a spin-on hard mask layer on the first separation layer, wherein the spin-on hard mask layer covers the first structures, the first dummy patterns and the align key patterns.