Semiconductor device
    1.
    发明授权

    公开(公告)号:US11417664B2

    公开(公告)日:2022-08-16

    申请号:US17034652

    申请日:2020-09-28

    Inventor: Jongin Kang

    Abstract: A semiconductor device includes a substrate including a first region having a first trench and a second region having a second trench. A first buried insulation layer pattern is disposed in the first trench. The second trench includes the first buried insulation layer pattern, a second buried insulation layer pattern, and a third buried insulation layer pattern sequentially stacked therein. A first buffer insulation layer is disposed on the substrate in the first and second regions and has a flat upper surface. A second buffer insulation layer is disposed on the first buffer insulation layer. A bit line structure is disposed on the first and second regions. A first portion of the bit line structure is disposed on the second buffer insulation layer and has a flat lower surface. A second portion of the bit line structure directly contacts a surface of the substrate in the first region.

    SEMICONDUCTOR DEVICES HAVING DUMMY GATE STRUCTURES

    公开(公告)号:US20220406786A1

    公开(公告)日:2022-12-22

    申请号:US17568262

    申请日:2022-01-04

    Inventor: Jongin Kang

    Abstract: A semiconductor device includes a substrate including a cell area and an interface area surrounding the cell area, the substrate including a device isolation layer defining an active region in the cell area and including an area isolation layer in the interface area, a gate structure extending in the cell area in a first horizontal direction, the gate structure being buried in the substrate and intersecting the active region, a bit line structure intersecting the gate structure and extending in a second horizontal direction intersecting the first horizontal direction, and dummy gate structures extending in the interface area in the first horizontal direction and being spaced apart from one another in the second horizontal direction. The dummy gate structures are buried in the area isolation layer and being spaced apart from the gate structure in the second horizontal direction.

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