公开(公告)号：US09704571B2

公开(公告)日：2017-07-11

申请号：US15209126

申请日：2016-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Do-Kyun Kim ,  Dong-Yang Lee ,  Kwang-Hyun Kim

IPC: G11C11/24 ,  G11C11/56 ,  G11C11/4096 ,  G11C11/4094 ,  G11C11/4091

CPC classification number: G11C11/565 ,  G11C7/1006 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4096

Abstract: A method of operating a memory device includes writing cell data having one of at least three states to a memory cell; amplifying a voltage level of a bit line connected to the memory cell; determining that the cell data is in a first state when the voltage level of the bit line sensed at a sensing point is equal to or greater than a first reference voltage; determining that the cell data is in a second state when the voltage level of the bit line sensed at the sensing point is equal to or less than a second reference voltage which has a lower voltage level than the first reference voltage; and determining that the cell data is in a third state when the cell data is not in the first or second states.

公开(公告)号：US09609438B2

公开(公告)日：2017-03-28

申请号：US14862969

申请日：2015-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Hyun Kim ,  Kyu-Eun Park ,  Brian S J Han ,  Young-Hun An

IPC: H04R1/02 ,  H04R9/06 ,  H04R9/02 ,  H04R7/18 ,  H04R1/28 ,  H04R1/32 ,  H04R31/00

CPC classification number: H04R9/06 ,  H04R1/02 ,  H04R1/2811 ,  H04R1/323 ,  H04R7/18 ,  H04R9/025 ,  H04R31/003 ,  H04R2499/11

Abstract: A speaker apparatus and an electronic device having the same are provided. The speaker apparatus includes a hollow shape frame, a magnet disposed in an internal part of the hollow shape frame, a voice coil installed in proximity to the magnet, a diaphragm including a diaphragm edge that vibrates by an electric current applied to the voice coil, and a diaphragm edge compression part extended upward along the diaphragm edge. The diaphragm edge compression part contacts an inner surface of a housing of the electronic device.

公开(公告)号：US09646719B2

公开(公告)日：2017-05-09

申请号：US14968898

申请日：2015-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Hyun Kim

IPC: G06F3/06 ,  G11C29/56 ,  G11C8/18 ,  G11C11/4076 ,  G11C29/04

CPC classification number: G11C29/56012 ,  G11C8/18 ,  G11C11/4076 ,  G11C2029/0401

Abstract: A memory device includes first and second memory cell arrays, a first controller, and a second controller. The first controller controls the first memory cell array through first word line signals and first bit line signals to execute an operation corresponding to a command signal based on an address signal and a data signal. The second controller includes first and second mode registers. The second controller writes sampled values of the address signal and the command signal to the second memory cell array through access signals to form a log in response to stored values of the first and second mode registers or reads stored values of the second memory cell array as the data signal through the access signals.

公开(公告)号：US20190140668A1

公开(公告)日：2019-05-09

申请号：US16104497

申请日：2018-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DUK-SUNG KIM ,  Kwang-Hyun Kim

IPC: H03M13/35 ,  G06F11/10 ,  G11C29/52

Abstract: A semiconductor memory device includes a memory cell array and an error check and correction (ECC) circuit. The ECC circuit performs ECC encoding of write data that are stored in the memory cell array and performs ECC decoding of read data corresponding to the write data that are read out from the memory cell array, based on an on-die ECC level corresponding to the write data. The on-die ECC level is determined among a plurality of on-die ECC levels depending on an importance degree of the write data.