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公开(公告)号：US12040020B2
公开(公告)日：2024-07-16
申请号：US17854163
申请日：2022-06-30
发明人： Kwangho Choi , Minseok Kim , Il Han Park , Jun-Yong Park , Joonsuc Jang
CPC分类号： G11C16/0433 , G11C16/08 , G11C16/12 , G11C16/26
摘要： Disclosed is a memory device which includes a history table and communicates with a storage controller. A method of operating the memory device includes receiving a first request indicating a first core operation of a first memory block from the storage controller, determining whether history data of the first memory block have a first value or a second value, with reference to the history table, in response to the first request, when it is determined that the history data of the first memory block have the first value, performing the first core operation corresponding to a first type on the first memory block, and after performing the first core operation corresponding to the first type on the first memory block, updating the history data of the first memory block in the history table from the first value to the second value.
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公开(公告)号：US11574692B2
公开(公告)日：2023-02-07
申请号：US17359688
申请日：2021-06-28
发明人： Kwangho Choi , Jin-Young Kim , Se Hwan Park , Il Han Park , Ji-Sang Lee , Joonsuc Jang
IPC分类号： G11C16/34 , G11C11/56 , G11C16/04 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/24 , H01L25/065 , H01L25/18 , H01L23/00
摘要： A nonvolatile memory device includes a memory cell array having cell strings that each includes memory cells stacked on a substrate in a direction perpendicular to the substrate. A row decoder is connected with the memory cells through word lines. The row decoder applies a setting voltage to at least one word line of the word lines and floats the at least one word line during a floating time. A page buffer circuit is connected with the cell strings through bit lines. The page buffer senses voltage changes of the bit lines after the at least one word line is floated during the floating time and outputs a page buffer signal as a sensing result. A counter counts a number of off-cells in response to the page buffer signal. A detecting circuit outputs a detection signal associated with a defect cell based on the number of off-cells.
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公开(公告)号：US10467037B2
公开(公告)日：2019-11-05
申请号：US15003031
申请日：2016-01-21
发明人： Kwangho Choi , Taehack Lee , Sangkyoo Jeong , Yongtae Jeon , Kijo Jung
摘要： A storage device includes a plurality of nonvolatile memories; and a storage controller which is connected to the nonvolatile memories and controls the nonvolatile memories, wherein the storage controller is configured to, perform an interface operation on the basis of a queue-based command exchange scheme with a host, and access administrator queue information corresponding to each of a plurality of virtualization functions of the host.
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