LIQUID SUPPLY SYSTEM
    1.
    发明公开

    公开(公告)号:US20240105469A1

    公开(公告)日:2024-03-28

    申请号:US18358160

    申请日:2023-07-25

    CPC classification number: H01L21/67023 B01D19/0031 B01D19/0063 B01D19/0068

    Abstract: A liquid supply system includes a liquid supply unit; a liquid pressurizer connected to the liquid supply unit; a compressor connected to the liquid pressurizer; a pump at a rear end of the liquid pressurizer to allow liquid to flow; an inflow control valve between the liquid supply unit and the liquid pressurizer; and an outflow control valve between the liquid pressurizer and the pump, wherein the liquid pressurizer is configured to supply liquid having a dissolved gas concentration that is lower than a dissolved gas concentration of liquid supplied from the liquid supply unit to the pump.

    SEMICONDUCTOR PROCESS APPARATUS
    3.
    发明申请

    公开(公告)号:US20250028257A1

    公开(公告)日:2025-01-23

    申请号:US18436744

    申请日:2024-02-08

    Abstract: A semiconductor process apparatus includes a light generator configured to output extreme ultraviolet (EUV) light having an EUV wavelength band, a mask stage configured to seat a mask reflecting the EUV light output from the light generator, a light-receiving optical unit including a plurality of mirrors generating output light by reflecting the EUV light reflected from the mask, at least one of the plurality of mirrors including a mirror body and a reflective layer attached to a surface of the mirror body, a power supply configured to apply a bias voltage to the reflective layer, and a substrate stage configured to seat a substrate to be irradiated with the output light.

    WARPAGE CONTROL
    6.
    发明申请

    公开(公告)号:US20250054878A1

    公开(公告)日:2025-02-13

    申请号:US18632437

    申请日:2024-04-11

    Abstract: A warpage control method includes measuring displacement in a vertical direction perpendicular to a front surface of a wafer and dividing the front surface of the wafer into a first stress region with a negative displacement value and a second stress region with a positive displacement value, to thereby derive a warpage model, defining a portion of a region, overlapping the first stress region, on the front surface of the wafer as a first compensation region based on the warpage model and defining a region, other than the first compensation region, on the front surface of the wafer as a second compensation region based on the warpage model, to thereby derive a stress compensation film pattern model, and forming a mask pattern in a region on a back surface of the wafer.

    SUBSTRATE SUPPORTING APPARATUS
    7.
    发明公开

    公开(公告)号:US20240079264A1

    公开(公告)日:2024-03-07

    申请号:US18235603

    申请日:2023-08-18

    CPC classification number: H01L21/68742 H01L21/67288 H01L21/68785

    Abstract: A substrate supporting apparatus includes a stage table configured to support a substrate and including a plurality of openings, a plurality of lift pins disposed to be vertically movable through the plurality of openings and configured to support the substrate, a lift support positioned outside the stage table from a plan view and vertically movable to support the substrate, an actuator configured to vertically actuate the plurality of lift pins and the lift support so as to load the substrate onto the stage table, and a controller configured to control the actuator.

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