公开(公告)号：US09425355B2

公开(公告)日：2016-08-23

申请号：US14161861

申请日：2014-01-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Ho Yoo ,  Han Kyu Seong ,  Nam Goo Cha ,  Tae Woong Kim

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/24 ,  H01L31/0232

CPC classification number: H01L33/24 ,  H01L31/0232 ,  H01L2224/48137 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012

Abstract: A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer.

Abstract translation: 一种半导体发光器件，包括在基板上的第一导电半导体基底层; 在所述第一导电半导体基底层上的绝缘层，所述绝缘层包括暴露所述第一导电半导体基底层的多个开口; 以及在所述第一导电半导体基底层上的多个纳米级发光结构，所述纳米级发光结构分别包括在所述第一导电半导体基底层的暴露区域上的第一导电半导体芯和有源层，以及第二导电半导体 层，其顺序地设置在第一导电半导体芯的表面上，其中每个纳米级发光结构的侧部的下边缘在绝缘层中的开口的内侧壁上。

公开(公告)号：US09525106B2

公开(公告)日：2016-12-20

申请号：US14676750

申请日：2015-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Sun Maeng ,  Jun Youn Kim ,  Sung Min Choi ,  Kyung Ho Yoo

IPC: H01L29/06 ,  H01L33/32 ,  H01L33/06 ,  H01L33/14

CPC classification number: H01L33/325 ,  H01L33/06 ,  H01L33/145

Abstract: A semiconductor light emitting device includes: an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element. The electron blocking layer is formed of AlxGa1-xN, where 0

Abstract translation: 半导体发光器件包括：n型半导体层和p型半导体层; 设置在n型半导体层和p型半导体层之间的有源层; 以及设置在有源层和p型半导体层之间并掺杂有p型掺杂元素的电子阻挡层。 电子阻挡层由Al x Ga 1-x N形成，其中0