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1.发明授权公开(公告)号：US09378879B2
公开(公告)日：2016-06-28
申请号：US13780167
申请日：2013-02-28
发明人： Soon-jae Kwon , Tae-gon Kim , Kyung-han Ahn
CPC分类号： H01F1/015 , C01B35/04 , H01F1/012 , Y02P20/129
摘要： A method of preparing a boron-doped transition metal pnictide magnetocaloric material, the method including: contacting a transition metal halide; a pnictogen element, a pnictogen oxide, or a combination thereof; a boron-containing oxide; and a reducing metal to provide a mixture; and heat treating the mixture to prepare the boron-doped transition metal pnictide magnetocaloric material.
摘要翻译： 一种制备硼掺杂过渡金属催化剂磁热材料的方法，所述方法包括：使过渡金属卤化物接触; 气味元素，氧化亚锡或其组合; 含硼氧化物; 和还原金属以提供混合物; 并对混合物进行热处理以制备掺硼的过渡金属催化剂磁热材料。
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2.发明授权公开(公告)号：US09495990B2
公开(公告)日：2016-11-15
申请号：US14150317
申请日：2014-01-08
发明人： Young-min Kang , Kyung-han Ahn , Sang-mock Lee
CPC分类号： G11B5/667 , G11B5/653 , G11B5/7325 , H01F10/3222
摘要： Hard magnetic exchange-coupled composite structures and perpendicular magnetic recording media including the hard magnetic exchange-coupled composite structures, include a ferrite crystal grain and a soft magnetic metal thin film bounded to the ferrite crystal grain by interfacial bonding on an atomic scale and having a thickness of about 5 nm or less, wherein a region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes an amorphous soft magnetic metal film.
摘要翻译： 硬磁交换耦合复合结构和包括硬磁交换耦合复合结构的垂直磁记录介质包括铁氧体晶粒和与原子尺度界面键合在铁素体晶粒上的软磁金属薄膜，并具有 约5nm或更小的厚度，其中与铁素体晶粒的界面相邻的软磁金属薄膜的区域包括非晶软磁金属膜。
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3.发明授权公开(公告)号：US09437358B2
公开(公告)日：2016-09-06
申请号：US14146274
申请日：2014-01-02
发明人： Young-min Kang , Kyung-han Ahn , Young-jae Kang , Sang-mock Lee
CPC分类号： H01F10/265 , C22C29/12 , C22C2202/02 , H01F1/11 , H01F1/344 , H01F1/346 , H01Q7/06 , Y10T428/12611 , Y10T428/24975 , Y10T428/265
摘要： A soft magnetic exchange-coupled composite structure, and a high-frequency device component, an antenna module, and a magnetoresistive device including the soft magnetic exchange-coupled composite structure, include a ferrite crystal grain as a main phase and a soft magnetic metal thin film bound to the ferrite crystal grain by interfacial bonding on an atomic scale. A region of the soft magnetic metal thin film adjacent to an interface with the ferrite crystal grain includes a crystalline soft magnetic metal.
摘要翻译： 软磁交换耦合复合结构以及包括软磁交换耦合复合结构的高频器件部件，天线模块和磁阻器件包括铁素体晶粒作为主相和软磁金属薄 膜通过原子尺度上的界面键合结合到铁素体晶粒上。 与铁素体晶粒的界面相邻的软磁性金属薄膜的区域包括结晶软磁性金属。
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4.发明授权公开(公告)号：US09190593B2
公开(公告)日：2015-11-17
申请号：US13660259
申请日：2012-10-25
发明人： Sung-woo Hwang , Kyu-hyoung Lee , Sang-il Kim , Kyung-han Ahn
摘要： A thermoelectric material including: a thermoelectric matrix; and a plurality of metal nanoparticles disposed in the thermoelectric matrix, wherein a difference between a work function of thermoelectric matrix and a work function of a metal particle of the metal nanoparticles is about −1.0 electron volt to about 1.0 electron volt.
摘要翻译： 一种热电材料，包括：热电矩阵; 以及布置在热电矩阵中的多个金属纳米颗粒，其中热电基体的功函数和金属纳米颗粒的金属颗粒的功函数之间的差约为-1.0电子伏特至约1.0电子伏。
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5.发明授权Thermoelectric material having reduced thermal conductivity, and thermoelectric device and module including the same 有权具有降低的热导率的热电材料，以及包括其的热电装置和模块公开(公告)号：US09190594B2
公开(公告)日：2015-11-17
申请号：US13871246
申请日：2013-04-26
发明人： Sang-il Kim , Kyu-hyoung Lee , Sung-woo Hwang , Kyung-han Ahn
CPC分类号： H01L35/18 , C01B19/002 , C01B19/007 , C01P2002/00 , C01P2002/01 , C01P2006/40 , H01L35/16
摘要： A thermoelectric material including: a thermoelectric matrix including grains with a composition of Formula 1: (BixSb1-x)a(TeySe1-y)b Formula 1 wherein 1.8≦a≦2.2, 2.8≦b≦3.2, 0≦x≦1, and 0≦y≦1, and wherein a plurality of dislocations is present along a grain boundary between adjacent grains of the composition of Formula 1.
摘要翻译： 一种热电材料，包括：包含具有式1的组成的晶粒的热电基体：（BixSb1-x）a（TeySe1-y）b式1其中1.8和nlE; a＆nlE; 2.2,2.8和nlE; b＆nlE; 3.2,0和nlE; x＆ 1和0＆nlE; y＆nlE; 1，并且其中多个位错沿着式1的组合物的相邻颗粒之间的晶界存在。
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6.发明申请METHOD OF PREPARING TRANSITION METAL PNICTIDE MAGNETOCALORIC MATERIAL, TRANSITION METAL PNICTIDE MAGNETOCALORIC MATERIAL, AND DEVICE INCLUDING THE SAME 有权制备过渡金属PNICTIDE磁铁材料，过渡金属PNICTIMA MAGOROCALORIC材料的方法和包括它们的装置公开(公告)号：US20130264512A1
公开(公告)日：2013-10-10
申请号：US13780167
申请日：2013-02-28
发明人： Soon-jae Kwon , Tae-gon Kim , Kyung-han Ahn
IPC分类号： H01F1/01
CPC分类号： H01F1/015 , C01B35/04 , H01F1/012 , Y02P20/129
摘要： A method of preparing a boron-doped transition metal pnictide magnetocaloric material, the method including: contacting a transition metal halide; a pnictogen element, a pnictogen oxide, or a combination thereof; a boron-containing oxide; and a reducing metal to provide a mixture; and heat treating the mixture to prepare the boron-doped transition metal pnictide magnetocaloric material.
摘要翻译： 一种制备硼掺杂过渡金属催化剂磁热材料的方法，所述方法包括：使过渡金属卤化物接触; 气味元素，氧化亚锡或其组合; 含硼氧化物; 和还原金属以提供混合物; 并对混合物进行热处理以制备掺硼的过渡金属催化剂磁热材料。
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