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公开(公告)号：US10931905B2
公开(公告)日：2021-02-23
申请号：US16172004
申请日：2018-10-26
发明人： Young-Gu Jin , Min-Sun Keel , Young-Chan Kim
IPC分类号： H04N5/369 , H04N5/3745 , H04N5/351 , G01S17/89 , G06T7/521
摘要： A pixel array in a three-dimensional image sensor includes depth pixels and an ambient light cancellation (ALC) circuit. The depth pixels operate in response to photo control signals having different phases, and generate distance information of an object based on light reflected by the object. The ALC circuit removes an ambient light component from the reflected light, and is shared by the depth pixels. Each depth pixel includes a photoelectric conversion region, a floating diffusion region, a photo gate, and a drain gate. The photoelectric conversion region collects photo charges based on the reflected light. The floating diffusion region accumulates the photo charges. The photo gate is activated in response to one of the photo control signals. The photoelectric conversion region accumulates the photo charges when the photo gate is activated, and the photo charges in the photoelectric conversion region are released when the drain gate is activated.
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公开(公告)号：US10484630B2
公开(公告)日：2019-11-19
申请号：US15631278
申请日：2017-06-23
发明人： Min-Sun Keel , Kyoungmin Koh , Sanghoon Ha
IPC分类号： H04N5/363 , H01L27/146 , H04N5/345 , H04N5/355 , H04N5/357 , H04N9/04 , H04N5/369 , H04N5/3745
摘要： An image sensor includes a photoelectric device generating an electric charge from light; a feedback device generating a reset voltage using a predetermined reference voltage; and a pixel circuit generating a pixel voltage using the reset voltage and the electric charge, setting the reset voltage to the reference voltage using the feedback device a first period, and outputting the pixel voltage and the reset voltage during a second period.
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公开(公告)号：US10991748B2
公开(公告)日：2021-04-27
申请号：US16124226
申请日：2018-09-07
发明人： Min-Sun Keel , Doo Won Kwon , Hyun Surk Ryu , Young Chan Kim , Young Gu Jin
IPC分类号： H01L27/146 , H01L23/00 , H04N13/204 , G06T7/521 , H04N5/378
摘要： A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.
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公开(公告)号：US11984467B2
公开(公告)日：2024-05-14
申请号：US17368112
申请日：2021-07-06
发明人： Dae Shik Kim , Min-Sun Keel , Sang Kil Lee
IPC分类号： H01L27/146 , H01L25/065 , H10B61/00
CPC分类号： H01L27/14636 , H01L25/0657 , H01L27/1462 , H01L27/14634 , H10B61/00
摘要： An image sensor includes an upper chip having a pixel array connected to a first connecting structure, and a lower chip below the upper chip and having a second connecting structure connected to the first connecting structure and having first and second stacked metal layers with a same thickness, a third metal layer on the second metal layer and thicker than the second metal layer, a fourth metal layer on the third metal layer and thicker than the third metal layer, first through third insulating layers alternating with the first through fourth metal layers, a first memory device with a first MTJ element in at least one of the first and second insulating layers, and a second memory device with a second MTJ element different from the first MTJ element, the second MTJ element being in at least one of the first through third insulating layers.
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公开(公告)号：US11778161B2
公开(公告)日：2023-10-03
申请号：US17398113
申请日：2021-08-10
发明人： Kyu-Min Kyung , Seung-Chui Shin , Min-Sun Keel
IPC分类号： H04N13/254 , G01S17/894 , H04N13/296
CPC分类号： H04N13/254 , G01S17/894 , H04N13/296
摘要： A time of flight (TOF) camera device and a method of operating the same is provided. The time of flight (TOF) camera device includes a pulse generator configured to generate a pulse signal, a light module configured to emit output light to at least one object in response to the pulse signal, a three-dimensional (3D) sensor configured to receive reflected light when the output light is reflected by the at least one object for a first frame, a distance calculator configured to receive an output of the 3D sensor and generate a distance data signal, and a light density control device configured to receive the distance data signal from the distance calculator and output a light density control signal. The light density control signal may adjust the size of an opening in the light module to change a projected area from the output light onto the at least one object.
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公开(公告)号：US11644552B2
公开(公告)日：2023-05-09
申请号：US16921060
申请日：2020-07-06
发明人： Younggu Jin , Min-Sun Keel , Daeyun Kim , Youngchan Kim
IPC分类号： G01S7/48 , G01S7/486 , G01S17/894 , G01S7/481 , G01S7/4863 , G01S17/18
CPC分类号： G01S7/4868 , G01S7/4815 , G01S7/4863 , G01S17/18 , G01S17/894
摘要： An electronic device includes a time of flight (ToF) sensor including a pixel array, a light source that emits light signals, and an optical device that projects the light signals to areas of an object which respectively correspond to a plurality of pixel blocks including pixels of the pixel array. Each of the pixels includes a plurality of taps each including a photo transistor, a first transfer transistor connected with the photo transistor, a storage element connected with the first transfer transistor, a second transfer transistor connected with the storage element, a floating diffusion area connected with the second transfer transistor, and a readout circuit connected with the floating diffusion area. An overflow transistor is disposed adjacent to the photo transistor and connected with a power supply voltage.
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公开(公告)号：US20220191461A1
公开(公告)日：2022-06-16
申请号：US17398113
申请日：2021-08-10
发明人： Kyu-Min Kyung , Seung-Chul Shin , Min-Sun Keel
IPC分类号： H04N13/254 , H04N13/296 , G01S17/894
摘要： A time of flight (TOF) camera device and a method of operating the same is provided. The time of flight (TOF) camera device includes a pulse generator configured to generate a pulse signal, a light module configured to emit output light to at least one object in response to the pulse signal, a three-dimensional (3D) sensor configured to receive reflected light when the output light is reflected by the at least one object for a first frame, a distance calculator configured to receive an output of the 3D sensor and generate a distance data signal, and a light density control device configured to receive the distance data signal from the distance calculator and output a light density control signal. The light density control signal may adjust the size of an opening in the light module to change a projected area from the output light onto the at least one object.
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公开(公告)号：US11082652B2
公开(公告)日：2021-08-03
申请号：US16225642
申请日：2018-12-19
发明人： Younggu Jin , Youngchan Kim , Min-Sun Keel
IPC分类号： H04N5/3745 , H04N5/369 , H04N5/374 , H04N5/378 , H04N5/359 , G01S7/4863
摘要： Image sensors and methods of operating the image sensors are provided. The image sensors may include a pixel configured to generate an image signal in response to light incident on the pixel. The pixel may include a charge collection circuit configured to collect charges, which are produced by the light incident on the pixel, during a sensing period and a floating diffusion region. The image sensor may further include a storage unit configured to store the charges and, during a transfer period after the sensing period, configured to transfer at least a portion of the charges to the floating diffusion region. An amount of charges that is transferred from the storage unit to the floating diffusion region may be controlled by a voltage level of a storage control signal that is applied to a storage control terminal of the storage unit.
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公开(公告)号：US10355051B2
公开(公告)日：2019-07-16
申请号：US15632751
申请日：2017-06-26
发明人： Min-Sun Keel , Sehyeon Kang , Tae-Yon Lee
IPC分类号： H01L27/30 , H04N5/378 , H04N5/341 , H04N5/369 , H01L27/146
摘要： An image sensor includes a plurality of row lines extending in a first direction, a plurality of column lines including a plurality of first column lines and a plurality of second column lines, the plurality of column lines intersects the plurality of row lines, and a plurality of pixels arranged along the plurality of row lines and the plurality of column lines, the plurality of pixels includes a plurality of pixel groups, each of the plurality of pixel groups includes two or more pixels. Each pixel includes a first photoelectric element, a second photoelectric element, a first pixel circuit connected to the first photoelectric element, and a second pixel circuit connected to the second photoelectric element. In each pixel group, the first pixel circuits share one of the plurality of first column lines and the second pixel circuits share one of the plurality of second column lines.
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公开(公告)号：US11810941B2
公开(公告)日：2023-11-07
申请号：US17217167
申请日：2021-03-30
发明人： Min-Sun Keel , Doo Won Kwon , Hyun Surk Ryu , Young Chan Kim , Young Gu Jin
IPC分类号： H01L27/146 , H01L23/00 , H04N13/204 , G06T7/521 , H04N25/75
CPC分类号： H01L27/14647 , H01L24/05 , H01L24/13 , H01L24/16 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H04N13/204 , G06T7/521 , G06T2207/10024 , G06T2207/10028 , H01L24/14 , H01L2224/0401 , H01L2224/05554 , H01L2224/06131 , H01L2224/13013 , H01L2224/13016 , H01L2224/13147 , H01L2224/14131 , H01L2224/16014 , H01L2224/16145 , H04N25/75
摘要： A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.
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