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公开(公告)号:US10599562B2
公开(公告)日:2020-03-24
申请号:US15984445
申请日:2018-05-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ohchul Kwon
Abstract: A nonvolatile memory device includes multiple memory blocks. A first memory block stores first data. A reference memory block stores an indicator indicating the first memory block as an indication in response to a first direct access command received from the outside. A first physical area of the first memory block is accessed according to a page address received from the outside together with the first direct access command, and the indication of the indicator.
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公开(公告)号:US11776946B2
公开(公告)日:2023-10-03
申请号:US17224520
申请日:2021-04-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Junho Cho , Ohchul Kwon , Seungjin Cheon , Tea-Geon Kim , Bubryong Lee , Junglae Jung
IPC: H01L25/00 , H01L23/00 , H01L25/18 , H01L23/538 , H01L21/56
CPC classification number: H01L25/50 , H01L21/565 , H01L23/5385 , H01L24/09 , H01L24/17 , H01L24/32 , H01L24/46 , H01L24/73 , H01L24/81 , H01L24/85 , H01L24/91 , H01L24/92 , H01L25/18 , H01L24/16 , H01L24/29 , H01L24/48 , H01L2224/13101 , H01L2224/16145 , H01L2224/16225 , H01L2224/2919 , H01L2224/32225 , H01L2224/48227 , H01L2224/73253 , H01L2224/73257 , H01L2224/73265 , H01L2224/81801 , H01L2224/92225 , H01L2225/107 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00012 , H01L2224/73265 , H01L2224/32145 , H01L2224/48227 , H01L2924/00012 , H01L2924/15311 , H01L2224/73265 , H01L2224/32145 , H01L2224/48227 , H01L2924/00012 , H01L2924/15311 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00012 , H01L2924/181 , H01L2924/00012 , H01L2224/13101 , H01L2924/014 , H01L2924/00014 , H01L2224/81801 , H01L2924/00014 , H01L2924/00014 , H01L2224/45099
Abstract: A method of manufacturing a package-on-package device includes a bonding step carried out by a bonding apparatus including a pressing member and a light source that produces a laser beam. A bottom package including a lower substrate, lower solder balls alongside an edge of the lower substrate, and a lower chip on a center of the lower substrate is provided, the bottom package is bonded to an interposer substrate having upper solder balls aligned with the lower solder balls, and a top package having an upper substrate and an upper chip on the upper substrate is bonded to the interposer substrate. While the interposer substrate is disposed on the bottom package, the pressing member presses the interposer substrate against the bottom package, and the laser beam adheres the lower solder balls to the upper solder balls.
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公开(公告)号:US11132143B2
公开(公告)日:2021-09-28
申请号:US16577790
申请日:2019-09-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Young Joon Jang , Chun-Um Kong , Ohchul Kwon , Junki Kim , Hyung-Kyun Byun
IPC: G06F3/06
Abstract: A storage device includes a nonvolatile memory device that includes a plurality of memory blocks, and a controller that uses some memory blocks of the plurality of memory blocks as a buffer area. Memory blocks storing invalid data from among the some memory blocks are invalid memory blocks, and the controller identifies memory blocks, of which an elapsed time after erase is greater than a reuse time, from among the invalid memory blocks as an available buffer size, and provides the available buffer size to an external host device.
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