公开(公告)号：US20160056083A1

公开(公告)日：2016-02-25

申请号：US14833922

申请日：2015-08-24

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： JUNG-HO DO ,  SANGHOON BAEK ,  SUNYOUNG PARK ,  SANG-KYU OH ,  JINTAE KIM ,  HYOSIG WON

IPC分类号： H01L21/8234 ,  H01L21/027 ,  H01L29/66 ,  H01L29/417 ,  H01L21/321 ,  H01L21/28 ,  H01L21/768

CPC分类号： H01L21/823475 ,  H01L21/0274 ,  H01L21/28008 ,  H01L21/32115 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L29/41758 ,  H01L29/66568

摘要： A method of manufacturing a semiconductor device includes forming an active pattern and a gate electrode crossing the active pattern on a substrate, forming a first contact connected to the active pattern at a side of the gate electrode, forming a second contact connected to the gate electrode, and forming a third contact connected to the first contact at the side of the gate electrode. The third contact is formed using a photomask different from that used to form the first contact. A bottom surface of the third contact is disposed at a level in the device lower than the level of a top surface of the first contact.

摘要翻译： 一种制造半导体器件的方法包括：在基板上形成与有源图案交叉的有源图案和栅电极，在栅电极侧形成连接到有源图案的第一触点，形成连接到栅电极的第二触点 并且形成在栅电极侧与第一接触连接的第三触点。 使用不同于用于形成第一接触的光掩模形成第三接触。 第三触点的底表面设置在器件中比第一触点的顶表面的水平低的水平面上。