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公开(公告)号：US11139441B2
公开(公告)日：2021-10-05
申请号：US16297923
申请日：2019-03-11
发明人： Jaejun Chang , Sang Jin Lee , Eun Joo Jang , Ha Il Kwon , Dae Young Chung
摘要： A quantum dot device including an anode and a cathode facing each other, a quantum dot layer disposed between the anode and the cathode, and an electron transport layer disposed between the cathode and the quantum dot layer, wherein the quantum dot layer includes an emissive quantum dot emitting light in at least one part of a wavelength region in a visible region and a non-emissive quantum dot configured to not emit light in a visible region, and a difference between a lowest unoccupied molecular orbital (LUMO) energy level of the non-emissive quantum dot and a LUMO energy level of the electron transport layer is greater than or equal to about 0.5 electronvolts (eV).
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公开(公告)号：US11038112B2
公开(公告)日：2021-06-15
申请号：US16203988
申请日：2018-11-29
发明人： Dae Young Chung , Moon Gyu Han , Tae Hyung Kim , Sang Jin Lee , Eun Joo Jang
摘要： An electroluminescent device and a display device includes the same are disclosed. The electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode and including a first organic material having a conjugated structure; an emission layer disposed directly on the hole transport layer and including a plurality of light emitting particles; an electron transport layer disposed on the emission layer; and a second electrode disposed on the electron transport layer, wherein at least one of the light emitting particles includes a core and a hydrophilic ligand attached to a surface of the core, wherein the hole transport layer has a first thickness and a second thickness at any two point locations, and the first thickness and the second thickness satisfy Equation 1.
Equation 1 is described in the detailed description.-
公开(公告)号：US10961446B2
公开(公告)日：2021-03-30
申请号：US16297965
申请日：2019-03-11
发明人： Kwanghee Kim , Jaejun Chang , Oul Cho , Tae Hyung Kim , Sang Jin Lee , Eun Joo Jang , Young-soo Jeong , Moon Gyu Han
摘要： A quantum dot, and a light emitting device including the same is provided. The quantum dot includes a semiconductor nanocrystal and an organic ligand bound to the surface of the semiconductor nanocrystal, wherein the organic ligand includes a first ligand derived from a first thiol compound including a C12 or more aliphatic hydrocarbon group, and a second ligand derived from a second thiol compound including a C8 or less aliphatic hydrocarbon group.
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公开(公告)号：US10672714B2
公开(公告)日：2020-06-02
申请号：US15928845
申请日：2018-03-22
发明人： Min Sek Jang , Sang Jin Lee
IPC分类号： H01L23/538 , H01L23/31 , H01L23/00 , H01L25/065
摘要： A fan-out semiconductor package includes: a first semiconductor chip having an active surface having first connection pads disposed thereon and an inactive surface opposing the active surface; a second semiconductor chip having an active surface having second connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of each of the first and second semiconductor chips; and a connection member disposed on the active surface of each of the first and second semiconductor chips and including a redistribution layer electrically connected to the first and second connection pads, wherein the first and second semiconductor chips are physically integrated with each other, and the first and second semiconductor chips have internal circuits, respectively.
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公开(公告)号：US11133468B2
公开(公告)日：2021-09-28
申请号：US16451443
申请日：2019-06-25
发明人： Jaejun Chang , O Hyun Kwon , Tae Hyung Kim , Jhun Mo Son , Sang Jin Lee , Eun Joo Jang , Dae Young Chung
IPC分类号： H01L51/00 , H01L51/50 , C09K11/88 , C09K11/02 , C09K11/66 , C09K11/74 , C09K11/59 , C09K11/65 , C09K11/08 , B82Y30/00
摘要： A semiconductor-ligand composite, including a semiconductor nanocrystal and a ligand layer including an organic ligand coordinated on a surface of the semiconductor nanocrystal, wherein the organic ligand includes a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2 or a combination thereof, wherein Chemical Formula 1 and Chemical Formula 2 are given below and are the same as described in detail herein.
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公开(公告)号：US10446781B2
公开(公告)日：2019-10-15
申请号：US16001227
申请日：2018-06-06
发明人： Hongkyu Seo , Eun Joo Jang , Dae Young Chung , Tae-Ho Kim , Sang Jin Lee
摘要： A quantum dot device includes an anode, a hole injection layer on the anode, a hole transport layer on the hole injection layer, a quantum dot layer on the hole transport layer, and a cathode on the quantum dot layer, wherein a highest occupied molecule orbital (HOMO) energy level of the quantum dot layer is greater than or equal to about 5.6 electronvolts (eV), a difference between a HOMO energy level of the hole transport layer and the highest occupied molecule orbital energy level of the quantum dot layer is less than about 0.5 eV, the hole injection layer has a first surface contacting the anode and a second surface contacting the hole transport layer, and a HOMO energy level of the first surface of the hole injection layer is different from a HOMO energy level of the second surface of the hole injection layer.
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公开(公告)号：US12030775B2
公开(公告)日：2024-07-09
申请号：US17208331
申请日：2021-03-22
发明人： Sang Jin Lee , Young Kwon Kim , Ungi Bak , Jonghyun Lee , Ui Yong Jung
IPC分类号： C01B3/06 , H01M8/04082 , H01M8/0432
CPC分类号： C01B3/065 , B01J2219/00164 , C01B2203/066 , C01B2203/16 , H01M8/04216 , H01M8/04373 , Y02E60/32 , Y02E60/36
摘要： An apparatus for supplying gas includes: an ion chamber; and a gas supply unit connected to the ion chamber, wherein the gas supply unit includes: a case having an internal space; an inactive gas supply unit connected to the ion chamber; and a hydrogen gas supply unit installed inside or outside of the case, wherein the hydrogen gas supply unit includes: a hydrogen gas generator generating hydrogen gas; a controller connected to the hydrogen gas generator; a dehumidifying filter connected to the controller and removing moisture from the hydrogen gas; and a purifying filter connected to the dehumidifying filter and removing an impurity from the hydrogen gas, wherein the hydrogen gas generator is configured to generate the hydrogen gas through a chemical reaction between a reactant and a hydrogen-containing solid raw material.
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公开(公告)号：US11793011B2
公开(公告)日：2023-10-17
申请号：US17387281
申请日：2021-07-28
发明人： Sung Woo Kim , Tae Ho Kim , Eun Joo Jang , Hongkyu Seo , Sang Jin Lee , Dae Young Chung , Oul Cho
IPC分类号： H10K50/115 , H10K50/11 , H10K50/81 , H10K50/82 , H10K50/17 , H10K50/18 , H10K101/40 , H10K101/30 , H10K71/00 , H10K50/15 , H10K71/12 , H10K85/10 , H10K102/00
CPC分类号： H10K50/115 , H10K50/11 , H10K50/171 , H10K50/81 , H10K50/82 , H10K71/00 , H10K50/15 , H10K50/17 , H10K50/18 , H10K71/12 , H10K85/115 , H10K85/1135 , H10K2101/30 , H10K2101/40 , H10K2102/00 , H10K2102/331 , H10K2102/351 , H10K2102/361
摘要： A quantum dot device includes: a first electrode and a second electrode facing each other; a quantum dot layer between the first electrode and the second electrode, and an electron auxiliary layer between the quantum dot layer and the second electrode, the electron auxiliary layer including a first nanoparticle and a second nanoparticle which is larger than the first nanoparticle, wherein a work function of the first electrode is greater than a work function of the second electrode, and wherein a difference between a lowest unoccupied molecular orbital energy level of the quantum dot layer and a lowest unoccupied molecular orbital energy level of the electron auxiliary layer is less than about 1.1 electronvolts.
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公开(公告)号：US11152304B2
公开(公告)日：2021-10-19
申请号：US16580153
申请日：2019-09-24
发明人： Dong Hun Lee , Sang Jin Lee , Min-Sek Jang
IPC分类号： H01L23/528 , H01L23/522 , H01L23/31 , H01L23/00
摘要： A semiconductor package includes a frame including wiring layers and having a recess portion in which a stopper layer is disposed on a bottom surface, a semiconductor chip having an active surface and an inactive surface, the inactive surface being disposed in the recess portion and facing the stopper layer, a first connection portion on the connection pad, a second connection portion on the uppermost wiring layer, a stiffener on the upper surface of the frame and surround at least a portion of the second connection portion, the stiffener being spaced apart from second connection portion, an encapsulant covering at least portions of each of the frame and the semiconductor chip, and filling at least a portion of the recess portion, and a connection structure on the frame and the semiconductor chip, and including a redistribution layer electrically connected to the first and second connection portions.
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