公开(公告)号：US09318607B2

公开(公告)日：2016-04-19

申请号：US14273789

申请日：2014-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Woo Seo ,  Gun-Ok Jung ,  Min-Su Kim ,  Sang-Shin Han ,  Ju-Hyun Kang ,  Uk-Rae Cho

IPC: H01L23/528 ,  H01L27/02 ,  H01L29/78 ,  H01L23/538 ,  H01L27/092 ,  H01L27/12 ,  H01L27/06 ,  H01L23/00 ,  H01L25/10

CPC classification number: H01L29/785 ,  H01L23/5286 ,  H01L23/538 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/092 ,  H01L27/0924 ,  H01L27/1211 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/15331 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device includes a first source electrode configured to connect a first power rail to a first impurity region, the first power rail coupled to a first voltage source, a second source electrode configured to connect a second power rail to a second impurity region, the second power rail coupled to a second voltage source, the first and second voltage sources being different, a gate electrode on the first and second impurity regions, a first drain electrode on the first impurity region, a second drain electrode on the second impurity region and an interconnection line connected to the first drain electrode and the second drain electrode, the interconnection line forming at least one closed loop.

Abstract translation: 提供半导体器件和制造半导体器件的方法。 半导体器件包括：第一源电极，被配置为将第一电力轨连接到第一杂质区，第一电源轨耦合到第一电压源;第二源极，被配置为将第二电力轨连接到第二杂质区; 第二电源轨耦合到第二电压源，第一和第二电压源不同，第一和第二杂质区上的栅电极，第一杂质区上的第一漏电极，第二杂质区上的第二漏电极， 连接到所述第一漏电极和所述第二漏极的互连线，所述互连线形成至少一个闭环。