公开(公告)号：US20220344329A1

公开(公告)日：2022-10-27

申请号：US17497449

申请日：2021-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Myungsoo SEO ,  Sangjung KANG ,  Juyoun KIM ,  Seulgi YUN ,  Seki HONG

IPC: H01L27/088 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L21/8234

Abstract: A method of manufacturing a semiconductor device includes forming a dummy gate structure on a substrate, partially removing the dummy gate structure to form a first opening that divides the dummy gate structure, forming a first division pattern structure in the first opening, replacing the dummy gate structure with a gate structure, removing the first division pattern structure to form a second opening, removing a portion of the gate structure from a sidewall of the second opening to enlarge the second opening, and forming a second division pattern in the enlarged second opening.

公开(公告)号：US20200243521A1

公开(公告)日：2020-07-30

申请号：US16848902

申请日：2020-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taewon HA ,  Juyoun KIM ,  Sang Min LEE ,  Moon-Sun HONG ,  Seki HONG

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L29/51 ,  H01L21/28

Abstract: A semiconductor device includes a substrate having an active region, and first to third transistors on the active region of the substrate, each of the first to third transistors including a dielectric layer on the substrate, a metal layer on the dielectric layer, a barrier layer between the dielectric layer and the metal layer, and a work function layer between the dielectric layer and the barrier layer, wherein the barrier layer of the third transistor is in contact with the dielectric layer of the third transistor, and wherein a threshold voltage of the second transistor is greater than a threshold voltage of the first transistor and less than a threshold voltage of the third transistor.

公开(公告)号：US20210398978A1

公开(公告)日：2021-12-23

申请号：US17101472

申请日：2020-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juyoun KIM ,  Seulgi YUN ,  Seki HONG

IPC: H01L27/092 ,  H01L21/8238

Abstract: A semiconductor device includes first and second transistors on a substrate. The first transistor includes a first N-type active region, a first gate electrode having a first work function layer, and a first gate dielectric layer having high-k dielectrics containing La. The first work function layer includes a first layer having TiON, a second layer having TiN or TiON, a third layer having TiON, a fourth layer having TiN, and a fifth layer having TiAlC. The second transistor includes a first P-type active region, a second gate electrode having a second work function layer, and a second gate dielectric layer having high-k dielectrics. The second work function layer includes the fifth layer directly contacting the second gate dielectric layer.

公开(公告)号：US20190189613A1

公开(公告)日：2019-06-20

申请号：US16174702

申请日：2018-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taewon HA ,  Juyoun KIM ,  Sang Min LEE ,  Moon-Sun HONG ,  Seki HONG

IPC: H01L27/088 ,  H01L21/28 ,  H01L29/51 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/28158 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L29/41791 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

Abstract: A semiconductor device includes a substrate having an active region, and first to third transistors on the active region of the substrate, each of the first to third transistors including a dielectric layer on the substrate, a metal layer on the dielectric layer, a barrier layer between the dielectric layer and the metal layer, and a work function layer between the dielectric layer and the barrier layer, wherein the barrier layer of the third transistor is in contact with the dielectric layer of the third transistor, and wherein a threshold voltage of the second transistor is greater than a threshold voltage of the first transistor and less than a threshold voltage of the third transistor.