公开(公告)号：US20130149835A1

公开(公告)日：2013-06-13

申请号：US13690456

申请日：2012-11-30

申请人： Samsung Electronics Co., Ltd.

发明人： Yangsoo Son ,  Hyerim Moon ,  Hagju Cho ,  Jeongnam Han ,  Joon Goo Hong

IPC分类号： H01L29/40

CPC分类号： H01L27/1104 ,  H01L21/823462 ,  H01L27/0207 ,  H01L29/1037 ,  H01L29/401 ,  H01L29/517 ,  H01L29/7848

摘要： A semiconductor device includes a first device isolation pattern defining a first active region, a second device isolation pattern defining a second active region, a first gate disposed on the first active region, the first gate including a gate insulating pattern of a first thickness and a second gate disposed on the second active region, the second gate including a gate insulating pattern of a second thickness greater than the first thickness. A top surface of the first device isolation pattern is curved down toward the first active region such that the first active region has an upper portion protruded from the top surface and rounded corners.

公开(公告)号：US20230090105A1

公开(公告)日：2023-03-23

申请号：US18074075

申请日：2022-12-02

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seonghwan Shin ,  Gunwoo Kim ,  Hyunsun Kim ,  Yangsoo Son ,  Tackmo Lee ,  Jeongin Han ,  Soonmin Hong

IPC分类号： H01L33/58 ,  H01L25/16

摘要： A display module is provided. The display module includes a substrate including a mounting surface, on which a plurality of inorganic light emitting devices is mounted, and a side surface; a front cover covering the mounting surface and including a side end that is in a region outwards from the mounting surface; a side cover covering the side surface of the substrate and bonded to a lower surface of the front cover, corresponding to the region outwards from the mounting surface, and the side surface of the substrate; and a light absorbing end member covering the side end of the front cover and configured to prevent light, emitted from the plurality of inorganic light emitting devices, from passing through the side end of the front cover.

公开(公告)号：US20150108584A1

公开(公告)日：2015-04-23

申请号：US14582429

申请日：2014-12-24

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Yangsoo Son ,  Hyerim Moon ,  Hagju Cho ,  Jeongnam Han ,  Joon Goo Hong

IPC分类号： H01L27/11 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L27/1104 ,  H01L21/823462 ,  H01L27/0207 ,  H01L29/1037 ,  H01L29/401 ,  H01L29/517 ,  H01L29/7848

摘要： A semiconductor device includes a first device isolation pattern defining a first active region, a second device isolation pattern defining a second active region, a first gate disposed on the first active region, the first gate including a gate insulating pattern of a first thickness and a second gate disposed on the second active region, the second gate including a gate insulating pattern of a second thickness greater than the first thickness. A top surface of the first device isolation pattern is curved down toward the first active region such that the first active region has an upper portion protruded from the top surface and rounded corners.

摘要翻译： 半导体器件包括限定第一有源区的第一器件隔离图案，限定第二有源区的第二器件隔离图案，设置在第一有源区上的第一栅极，第一栅极包括第一厚度的栅极绝缘图案和 第二栅极，其设置在第二有源区上，第二栅极包括具有大于第一厚度的第二厚度的栅极绝缘图案。 第一器件隔离图案的顶表面朝向第一有源区域向下弯曲，使得第一有源区域具有从顶表面和圆角突出的上部。