公开(公告)号：US09793291B2

公开(公告)日：2017-10-17

申请号：US15142365

申请日：2016-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Jin Shin ,  Hong-Suk Kim ,  Jung-Hwan Kim ,  Sang-Hoon Lee ,  Hun-Hyeong Lim ,  Yong-Seok Cho ,  Young-Dae Kim ,  Han-Vit Yang

IPC: H01L21/336 ,  H01L27/11582 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/02 ,  H01L21/28 ,  H01L27/11521 ,  H01L27/11568 ,  H01L21/768

CPC classification number: H01L27/11582 ,  H01L21/0206 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/76826 ,  H01L21/76831 ,  H01L27/11521 ,  H01L27/11568

Abstract: A method of manufacturing a semiconductor device, the method including forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern; and deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer.