公开(公告)号：US20230207044A1

公开(公告)日：2023-06-29

申请号：US17816601

申请日：2022-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyeong SEOK ,  Yonggul SONG ,  Eunchu OH

IPC: G11C29/50 ,  G11C11/56 ,  G11C16/10 ,  G11C16/26 ,  G11C29/42

CPC classification number: G11C29/50004 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/26 ,  G11C29/42 ,  G11C2029/5004

Abstract: In a method of reprogramming data in a nonvolatile memory device including a plurality of pages each of which includes a plurality of memory cells, first page data programmed in a first page is read from among a plurality of page data programmed in the plurality of pages. The plurality of page data have a threshold voltage distribution including a plurality of states. An error correction code (ECC) decoding is performed on the first page data. A reprogram operation is selectively performed on target bits in which an error occurs among a plurality of bits included in the first page data based on a result of performing the ECC decoding on the first page data and a reprogram voltage. The target bits correspond to a first state among the plurality of states. A voltage level of the reprogram voltage is adaptively changed.