公开(公告)号：US20200212063A1

公开(公告)日：2020-07-02

申请号：US16811171

申请日：2020-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungkeun SON ,  Yoocheol SHIN ,  Changhyun LEE ,  Hyunjung KIM ,  Chung-Il HYUN

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11565 ,  H01L27/11524 ,  H01L21/28 ,  H01L27/11519 ,  H01L27/11556

Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.

公开(公告)号：US20130100742A1

公开(公告)日：2013-04-25

申请号：US13653798

申请日：2012-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun LEE ,  Yoocheol SHIN ,  Jungdal CHOI

IPC: G11C11/34

CPC classification number: G11C11/34 ,  G11C5/02 ,  G11C5/025 ,  G11C5/06 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418

Abstract: A nonvolatile memory device is provided. The device may include a plurality of cell strings that are configured to share a bit line, word lines, and selection lines. Each of the cell strings may include a plurality of memory cells connected in series to each other and a string selection device controlling connections between the memory cells and the bit line, and the string selection device may include a first string selection element with a first threshold voltage and a second string selection element connected in series to the first string selection element and having a second threshold voltage different from the first threshold voltage. At least one of the first and second string selection elements may include a plurality of switching elements connected in series to each other.

Abstract translation: 提供非易失性存储器件。 该设备可以包括被配置为共享位线，字线和选择线的多个单元串。 每个单元串可以包括彼此串联连接的多个存储器单元和用于控制存储器单元和位线之间的连接的串选择设备，并且串选择设备可以包括具有第一阈值的第一串选择单元 电压和第二串选择元件串联连接到第一串选择元件并且具有不同于第一阈值电压的第二阈值电压。 第一和第二串选择元件中的至少一个可以包括彼此串联连接的多个开关元件。

公开(公告)号：US20190341401A1

公开(公告)日：2019-11-07

申请号：US16516793

申请日：2019-07-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoungkeun SON ,  Yoocheol SHIN ,  Changhyun LEE ,  Hyunjung KIM ,  Chung-lI HYUN

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/11519 ,  H01L27/11565

Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.

公开(公告)号：US20180219022A1

公开(公告)日：2018-08-02

申请号：US15935498

申请日：2018-03-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoungkeun SON ,  Yoocheol SHIN ,  Changhyun LEE ,  Hyunjung KIM ,  Chung-II HYUN

IPC: H01L27/11582 ,  H01L21/28 ,  H01L27/1157 ,  H01L27/11565

CPC classification number: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/40117

Abstract: A semiconductor device includes a substrate, a stack, and channel structures penetrating the stack. The stack includes gate electrodes and insulating layers alternately and repeatedly stacked on the substrate, and extending in a first direction. The channel structures in a first row are spaced apart from each other in the first direction. The stack includes a first sidewall that includes first recessed portions and first protruding portions. Each of first recessed portions is defined by an adjacent pair of the first recessed portions. Each of the first recessed portions has a shape recessed toward a first region of the stack between an adjacent pair of the channel structures of the first row. Each of the first recessed portions has a width that decreases in a direction toward the first region when measured along the first direction.