公开(公告)号：US20240096703A1

公开(公告)日：2024-03-21

申请号：US18341406

申请日：2023-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngchul Kwon ,  Deoksuk Jang

IPC: H01L21/78 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/53

CPC classification number: H01L21/78 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/53 ,  B23K2103/56

Abstract: A wafer dicing method includes preparing a wafer that includes a plurality of device forming regions and a scribe lane region that separates the plurality of device forming regions, forming a plurality of semiconductor devices in the plurality of device forming regions of the wafer, respectively, forming a plurality of inner cracks in the scribe lane region of the wafer by repeatedly irradiating a multiple pulse laser beam that includes a plurality of sub-laser beams along the scribe lane region, wherein the plurality of sub-laser beams have decreasing peak powers, and separating the plurality of semiconductor devices from each other along the plurality of inner cracks.

公开(公告)号：US20210354247A1

公开(公告)日：2021-11-18

申请号：US17139515

申请日：2020-12-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchul Kwon ,  Manhee Han

IPC: B23K26/53 ,  H01L21/67 ,  H01L21/78 ,  B23K26/0622 ,  B23K26/06 ,  B23K26/70 ,  H01S3/23 ,  G02B19/00

Abstract: A wafer processing apparatus includes: a laser apparatus configured to generate a laser beam; a focusing lens optical system configured to focus the laser beam on an inside of a wafer; an arbitrary wave generator configured to supply driving power to the laser apparatus; and a controller configured to control the arbitrary wave generator, wherein the laser beam includes a plurality of pulses sequentially emitted from the laser apparatus, and wherein each of the plurality of pulses is a non-Gaussian pulse, and a full width at half maximum (FWHM) of each of the plurality of pulses ranges from 1 ps to 500 ns.

公开(公告)号：US11883905B2

公开(公告)日：2024-01-30

申请号：US17139515

申请日：2020-12-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchul Kwon ,  Manhee Han

IPC: H01S3/23 ,  G02B19/00 ,  H01L21/67 ,  H01L21/683 ,  B23K26/53 ,  H01L21/78 ,  B23K26/0622 ,  B23K26/06 ,  B23K26/70 ,  B23K103/00 ,  H01S3/067

CPC classification number: B23K26/53 ,  B23K26/0624 ,  B23K26/0665 ,  B23K26/705 ,  G02B19/0009 ,  G02B19/0047 ,  H01L21/67115 ,  H01L21/78 ,  H01S3/2316 ,  B23K26/0648 ,  B23K2103/56 ,  H01L21/6836 ,  H01L2221/68327 ,  H01S3/067

Abstract: A wafer processing apparatus includes: a laser apparatus configured to generate a laser beam; a focusing lens optical system configured to focus the laser beam on an inside of a wafer; an arbitrary wave generator configured to supply driving power to the laser apparatus; and a controller configured to control the arbitrary wave generator, wherein the laser beam includes a plurality of pulses sequentially emitted from the laser apparatus, and wherein each of the plurality of pulses is a non-Gaussian pulse, and a full width at half maximum (FWHM) of each of the plurality of pulses ranges from 1 ps to 500 ns.