公开(公告)号：US11883905B2

公开(公告)日：2024-01-30

申请号：US17139515

申请日：2020-12-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchul Kwon ,  Manhee Han

IPC: H01S3/23 ,  G02B19/00 ,  H01L21/67 ,  H01L21/683 ,  B23K26/53 ,  H01L21/78 ,  B23K26/0622 ,  B23K26/06 ,  B23K26/70 ,  B23K103/00 ,  H01S3/067

CPC classification number: B23K26/53 ,  B23K26/0624 ,  B23K26/0665 ,  B23K26/705 ,  G02B19/0009 ,  G02B19/0047 ,  H01L21/67115 ,  H01L21/78 ,  H01S3/2316 ,  B23K26/0648 ,  B23K2103/56 ,  H01L21/6836 ,  H01L2221/68327 ,  H01S3/067

Abstract: A wafer processing apparatus includes: a laser apparatus configured to generate a laser beam; a focusing lens optical system configured to focus the laser beam on an inside of a wafer; an arbitrary wave generator configured to supply driving power to the laser apparatus; and a controller configured to control the arbitrary wave generator, wherein the laser beam includes a plurality of pulses sequentially emitted from the laser apparatus, and wherein each of the plurality of pulses is a non-Gaussian pulse, and a full width at half maximum (FWHM) of each of the plurality of pulses ranges from 1 ps to 500 ns.

公开(公告)号：US20240266307A1

公开(公告)日：2024-08-08

申请号：US18390205

申请日：2023-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghyun Roh ,  Wangsun Lim ,  Manhee Han ,  Jaeyoung Hong

IPC: H01L23/00 ,  H01L21/56

CPC classification number: H01L24/03 ,  H01L21/56 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0384 ,  H01L2224/0391 ,  H01L2224/96 ,  H01L2224/97

Abstract: Provided is a method of fabricating a semiconductor package, the method including forming a passivation layer and a first protective layer covering a semiconductor substrate and conductive pad above a first surface of the semiconductor substrate, removing a portion of the passivation layer and a portion of the first protective layer to expose the conductive pad, forming a second protective layer covering the conductive pad on the first protective layer, grinding a second surface opposite the first surface of the semiconductor substrate, dicing the semiconductor substrate, and removing the second protective layer to expose the conductive pad, wherein the second protective layer does not expose the conductive pad during the grinding and during the dicing.

公开(公告)号：US20210354247A1

公开(公告)日：2021-11-18

申请号：US17139515

申请日：2020-12-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchul Kwon ,  Manhee Han

IPC: B23K26/53 ,  H01L21/67 ,  H01L21/78 ,  B23K26/0622 ,  B23K26/06 ,  B23K26/70 ,  H01S3/23 ,  G02B19/00

Abstract: A wafer processing apparatus includes: a laser apparatus configured to generate a laser beam; a focusing lens optical system configured to focus the laser beam on an inside of a wafer; an arbitrary wave generator configured to supply driving power to the laser apparatus; and a controller configured to control the arbitrary wave generator, wherein the laser beam includes a plurality of pulses sequentially emitted from the laser apparatus, and wherein each of the plurality of pulses is a non-Gaussian pulse, and a full width at half maximum (FWHM) of each of the plurality of pulses ranges from 1 ps to 500 ns.