公开(公告)号：US20200087798A1

公开(公告)日：2020-03-19

申请号：US16574372

申请日：2019-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SOULBRAIN CO., LTD.

Inventor： Jungah KIM ,  Mihyun PARK ,  Jinwoo LEE ,  Keonyoung KIM ,  Hyosan LEE ,  Hoon HAN ,  Jin Uk LEE ,  Jung Hun LIM

IPC: C23F1/26 ,  H01L21/306 ,  H01L21/311 ,  C23F1/30

Abstract: Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

公开(公告)号：US20210130691A1

公开(公告)日：2021-05-06

申请号：US17087628

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20210054279A1

公开(公告)日：2021-02-25

申请号：US17087635

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20210054277A1

公开(公告)日：2021-02-25

申请号：US17087631

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20210054276A1

公开(公告)日：2021-02-25

申请号：US17087626

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US20190189631A1

公开(公告)日：2019-06-20

申请号：US16217049

申请日：2018-12-12

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: H01L27/11556 ,  H01L21/311 ,  H01L21/02 ,  C23F1/16 ,  C09K13/04

CPC classification number: H01L27/11556 ,  C09K13/04 ,  C23F1/16 ,  H01L21/0217 ,  H01L21/31116

Abstract: The present invention provides a composition for etching a silicon nitride film and a manufacturing method of a semiconductor device using the same, wherein the composition for etching a silicon nitride film comprises phosphoric acid, metaphosphoric acid, an ammonium salt-based compound, and water.

公开(公告)号：US20230136538A1

公开(公告)日：2023-05-04

申请号：US18088765

申请日：2022-12-26

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20210054286A1

公开(公告)日：2021-02-25

申请号：US17093662

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20210054285A1

公开(公告)日：2021-02-25

申请号：US17093658

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20200263087A1

公开(公告)日：2020-08-20

申请号：US15781471

申请日：2016-10-28

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/311 ,  H01L21/306

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.