公开(公告)号：US10332607B2

公开(公告)日：2019-06-25

申请号：US15830679

申请日：2017-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Na-Young Choi ,  Il-Han Park ,  Seung-Hwan Song

IPC: G11C16/34 ,  G11C16/28 ,  G11C16/08 ,  G06F11/10 ,  G11C16/24 ,  G11C29/02 ,  G11C29/42 ,  G11C11/56 ,  G11C29/52 ,  G11C16/04

Abstract: In a method of operating a nonvolatile memory device including a memory cell array, where the memory cell array includes a plurality of pages, and each of the plurality of pages includes a plurality of nonvolatile memory cells, a first sampling read operation is performed to count a first number of memory cells in a first region of a first page selected from the plurality of pages, using a first default read voltage and a first offset read voltage, and a second sampling read operation is selectively performed to count a second number of memory cells in a second region of the first page, using the first default read voltage and a second offset read voltage, based on a comparison result of the first number and a first reference value. The second offset read voltage is different from the first offset read voltage.

公开(公告)号：US20180261296A1

公开(公告)日：2018-09-13

申请号：US15830679

申请日：2017-12-04

Applicant: SAMSUNG ELECTRONICS CO. LTD.

Inventor： NA-YOUNG CHOI ,  Il-Han Park ,  Seung-Hwan Song

IPC: G11C16/34 ,  G11C16/28 ,  G11C16/24 ,  G11C16/08 ,  G06F11/10 ,  G11C29/52

CPC classification number: G11C16/3431 ,  G06F11/1068 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/24 ,  G11C16/28 ,  G11C16/3427 ,  G11C29/021 ,  G11C29/028 ,  G11C29/42 ,  G11C29/52 ,  G11C2211/5642

Abstract: In a method of operating a nonvolatile memory device including a memory cell array, where the memory cell array includes a plurality of pages, and each of the plurality of pages includes a plurality of nonvolatile memory cells, a first sampling read operation is performed to count a first number of memory cells in a first region of a first page selected from the plurality of pages, using a first default read voltage and a first offset read voltage, and a second sampling read operation is selectively performed to count a second number of memory cells in a second region of the first page, using the first default read voltage and a second offset read voltage, based on a comparison result of the first number and a first reference value. The second offset read voltage is different from the first offset read voltage.