公开(公告)号：US09466704B2

公开(公告)日：2016-10-11

申请号：US14291099

申请日：2014-05-30

Applicant: SAMSUNG Electronics Co., Ltd.

Inventor： Sung-il Chang ,  Changseok Kang ,  Jungdal Choi

IPC: H01L29/792 ,  H01L21/28 ,  H01L27/115 ,  H01L29/66 ,  H01L29/51 ,  G11C16/10 ,  G11C16/14

CPC classification number: H01L29/66833 ,  G11C16/10 ,  G11C16/14 ,  H01L21/28282 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/513 ,  H01L29/792 ,  H01L29/7926

Abstract: A nonvolatile memory device and method of manufacturing the same are provided. In the nonvolatile memory device, a blocking insulation layer is provided between a trap insulation layer and a gate electrode. A fixed charge layer spaced apart from the gate electrode is provided in the blocking insulation layer. Accordingly, the reliability of the nonvolatile memory device is improved.

Abstract translation: 提供一种非易失性存储器件及其制造方法。 在非易失性存储器件中，在阱绝缘层和栅电极之间设置阻挡绝缘层。 在隔离绝缘层中设置有与栅电极间隔开的固定电荷层。 因此，提高了非易失性存储装置的可靠性。