公开(公告)号：US20170115572A1

公开(公告)日：2017-04-27

申请号：US15264654

申请日：2016-09-14

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Seulgi JEONG ,  Minsoo KIM ,  Sunghwan KIM ,  Hyunji SONG ,  Sunhae KANG ,  Youngmin KIM ,  Yoona KIM ,  Jinhyung KIM ,  Younhee NAM ,  Jaeyeol BAEK ,  Byeri YOON ,  Chungheon LEE ,  Seunghee HONG ,  Sunmin HWANG

IPC: G03F7/11 ,  G03F7/09 ,  G03F7/40 ,  G03F7/20 ,  G03F7/32

Abstract: A method of producing a layer structure and a method of forming a pattern, the method of producing a layer structure including coating a first composition on a substrate that has a pattern thereon; curing the coated first composition to form a first organic layer; applying a liquid material to the first organic layer to remove a part of the first organic layer; and coating a second composition on remaining parts of the first organic layer; and curing the coated second composition on the remaining parts of the first organic layer to form a second organic layer: wherein the first composition and the second composition each independently include a solvent, and a polymer including a structural unit represented by Chemical Formula 1, *A1-B1*.  [Chemical Formula 1]

公开(公告)号：US20250044686A1

公开(公告)日：2025-02-06

申请号：US18764931

申请日：2024-07-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Yaeun SEO ,  Jimin KIM ,  Minyoung LEE ,  Eunmi KANG ,  Taegeun SEONG ,  Changsoo WOO ,  Sumin JANG ,  Bukeun OH ,  Chungheon LEE

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/039

Abstract: Disclosed is a method of forming patterns including coating a metal-containing resist composition on a substrate; a heat treatment including drying and heating to form a metal-containing resist layer on the substrate; exposing a metal-containing resist layer using a patterned mask; and developing including coating a developer composition to remove unexposed regions to form a resist pattern, wherein the coating the metal-containing resist composition is performed by coating the metal-containing resist composition with a spin coater at a speed of about 100 to about 1,500 rpm for about 60 to about 120 seconds, the heating is performed at a temperature of about 90 to about 200° C. for about 30 to about 120 seconds, the exposing the metal-containing resist layer is performed by irradiating extreme ultraviolet light, light having a wavelength of about 5 nm to about 50 nm, or a combination thereof.

公开(公告)号：US20240329537A1

公开(公告)日：2024-10-03

申请号：US18509184

申请日：2023-11-14

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Taegeun SEONG ,  Hyungrang MOON ,  Yoojeong CHOI ,  Wanhee LIM ,  Chungheon LEE ,  Daeseok SONG ,  Jun SAKONG

IPC: G03F7/32 ,  G03F7/004 ,  G03F7/16

CPC classification number: G03F7/32 ,  G03F7/0042 ,  G03F7/168

Abstract: A metal-containing photoresist developer composition, and a method of forming patterns including a step (e.g., an act or task) of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, an acid compound, and a conjugate base compound of the acid compound.

公开(公告)号：US20240019784A1

公开(公告)日：2024-01-18

申请号：US18321596

申请日：2023-05-22

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Ryunmin HEO ,  Jin-Hee BAE ,  Hyungrang MOON ,  Taeksoo KWAK ,  Gyeong Ryeong BAK ,  Chungheon LEE ,  Byeonggyu HWANG

IPC: G03F7/32 ,  G03F7/004

CPC classification number: G03F7/325 ,  G03F7/0042

Abstract: A metal-containing photoresist developer composition includes an organic solvent, and at least one additive selected from a phosphorous acid-based compound, a hypophosphorous acid-based compound, a sulfurous acid-based compound, and a hydroxamic acid-based compound, wherein the additive is included in an amount of about 0.0001 wt % to less than about 1.0 wt %. A method of forming patterns includes step of developing a metal-containing photoresist film using the metal-containing photoresist developer composition.