公开(公告)号：US10153171B2

公开(公告)日：2018-12-11

申请号：US15704054

申请日：2017-09-14

申请人： SAMSUNG SDI CO., LTD.

发明人： Huichan Yun ,  TaekSoo Kwak ,  Jin-Hee Bae ,  Jinwoo Seo ,  Kunbae Noh ,  Junyoung Jang

IPC分类号： H01L21/308 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/311

摘要： A method of forming patterns, patterns formed according to the method, and a semiconductor device including the patterns, the method including forming an etching subject layer on a substrate, forming a first layer on the etching subject layer such that the first layer has a projecting pattern, forming a second layer such that the second layer completely covers the projecting pattern of the first layer, partially removing the second layer such that a top of the projecting pattern is exposed and a patterned second layer remains at a side of the projecting pattern, removing the first layer such that a top of the etching subject layer is exposed, and etching the etching subject layer using the patterned second layer as an etching mask, wherein one of the first layer and the second layer is a carbon-containing layer and the other is a silicon-containing layer, and the silicon-containing layer is formed by coating a silicon-containing composition and heat-treating the same.

公开(公告)号：US10017646B2

公开(公告)日：2018-07-10

申请号：US15656341

申请日：2017-07-21

申请人： SAMSUNG SDI CO., LTD.

发明人： Sooyeon Sim ,  Jin-Hee Bae ,  TaekSoo Kwak ,  Yonggoog Kim ,  Jingyo Kim ,  Kunbae Noh ,  Huichan Yun ,  Jiho Lee ,  Byeong Gyu Hwang

IPC分类号： C01B33/12 ,  C09D1/00 ,  C09D7/00 ,  C09D7/12 ,  H01L21/02

CPC分类号： C09D1/00 ,  C01B33/12 ,  C09D7/20 ,  C09D7/63 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02318

摘要： A composition for forming silica layer includes a silicon-containing polymer and a solvent, wherein a weight average molecular weight of the silicon-containing polymer ranges from about 2,000 to about 100,000 and a branching ratio (a) of the silicon-containing polymer calculated by Equation 1 ranges from about 0.25 to about 0.50. η=k·Ma  [Equation 1] In Equation 1, η is an intrinsic viscosity of a silicon-containing polymer, M is an absolute molecular weight of a silicon-containing polymer, a is a branching ratio, and k is an intrinsic constant.