公开(公告)号：US20210005627A1

公开(公告)日：2021-01-07

申请号：US16503884

申请日：2019-07-05

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Tatsuya HINOUE ,  Kengo KAJIWARA ,  Ryosuke ITOU ,  Naohiro HOSODA ,  Yohei MASAMORI ,  Kota FUNAYAMA ,  Keisuke TSUKAMOTO ,  Hirofumi WATATANI

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11524

Abstract: First memory openings are formed through a first alternating stack of first insulating layers and first spacer material layers. Each first memory opening is filled with a first memory film, a sacrificial dielectric liner, and a first-tier opening fill material portion. Second memory openings are formed through a second alternating stack of second insulating layers and second spacer material layers. A second memory film is formed in each second memory opening. The first-tier opening fill material portions are removed selective to the sacrificial dielectric liners. The sacrificial dielectric liners are removed selective to the second memory films and the first memory films. A vertical semiconductor channel can be formed on each vertical stack of a first memory film and a second memory film.

公开(公告)号：US20190280001A1

公开(公告)日：2019-09-12

申请号：US16002265

申请日：2018-06-07

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yujin TERASAWA ,  Genta MIZUNO ,  Yusuke MUKAE ,  Yoshinobu TANAKA ,  Shiori KATAOKA ,  Ryosuke ITOU ,  Kensuke YAMAGUCHI ,  Naoki TAKEGUCHI

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11573 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed with stepped surfaces. Sacrificial metal plates are formed on the top surfaces of the sacrificial material layers, and a retro-stepped dielectric material portion is formed over the sacrificial metal plates. Contact via cavities are formed through the retro-stepped dielectric material portion employing the sacrificial metal plates as etch stop structures. The sacrificial metal plates are replaced with portions of insulating spacer layers. Sacrificial via fill structures within remaining volumes of the contact via cavities. The sacrificial material layers are replaced with electrically conductive layers. The sacrificial via fill structures are replaced with portions of staircase-region contact via structures that contact the electrically conductive layers.