公开(公告)号：US20190259772A1

公开(公告)日：2019-08-22

申请号：US15898571

申请日：2018-02-17

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yuji TAKAHASHI ,  Satoru MAYUZUMI ,  Vincent SHIH

IPC: H01L27/11556 ,  H01L27/102 ,  H01L27/06 ,  H01L21/822 ,  G11C16/04 ,  H01L45/00

Abstract: A memory device includes first conductive rails laterally extending along a first horizontal direction over a substrate, a rectangular array of first memory pillar structures, each containing a memory element, overlying top surfaces of the first conductive rails, second conductive rails laterally extending along a second horizontal direction and overlying top surfaces of the rectangular array of first memory pillar structures, and a one-dimensional array of first cavities free of solid material portions therein, laterally extending along the second horizontal direction and located between neighboring pairs of the second conductive rails.

公开(公告)号：US20200286901A1

公开(公告)日：2020-09-10

申请号：US16291673

申请日：2019-03-04

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Shigeki SHIMOMURA ,  Satoru MAYUZUMI ,  Hiroyuki OGAWA

IPC: H01L27/1159 ,  H01L27/11597 ,  H01L23/522 ,  H01L29/51 ,  H01L29/78 ,  H01L29/66 ,  G11C11/16

Abstract: A vertically alternating sequence of multi-fingered silicon-germanium layers and multi-fingered silicon layers is formed over a substrate. The multi-fingered silicon-germanium layers include silicon-germanium wires, and the multi-fingered silicon layers include silicon wires. Tubular memory films and multi-fingered gate electrodes are formed. Each gate electrode includes a respective gate electrode bar which overlies the silicon wires and a respective set of vertically-extending gate electrode fingers which is adjoined to a bottom portion of the respective gate electrode bar and spaced apart by the silicon wires. The multi-fingered silicon-germanium layers are removed selective to multi-fingered silicon layers. First active regions are formed at an end portion of each of the silicon wires. Second active regions are formed on silicon plate portions of the multi-fingered silicon layers.

公开(公告)号：US20200006431A1

公开(公告)日：2020-01-02

申请号：US16021694

申请日：2018-06-28

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Satoru MAYUZUMI ,  Wei Kuo SHIH ,  Yuji TAKAHASHI

IPC: H01L27/24 ,  H01L23/528 ,  H01L23/532 ,  H01L45/00 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

Abstract: A memory device includes first conductive rails laterally extending along a first horizontal direction over a substrate, where the first conductive rails include a fill portion, and a first cobalt-containing cap liner contacting a top surface of the fill portion, a rectangular array of first memory pillar structures overlying top surfaces of the first conductive rails, where each first memory pillar structure includes a respective first resistive memory element, and second conductive rails laterally extending along a second horizontal direction and overlying top surfaces of the rectangular array of first memory pillar structures.