公开(公告)号：US10115735B2

公开(公告)日：2018-10-30

申请号：US15617499

申请日：2017-06-08

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Fumitaka Amano ,  Kensuke Ishikawa ,  Shinya Inoue ,  Michiaki Sano

IPC: H01L29/06 ,  H01L27/11582 ,  H01L23/532 ,  H01L29/45 ,  H01L27/11556 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11519 ,  H01L27/11565

Abstract: A semiconductor device includes a silicon surface, a titanium silicide layer contacting the silicon surface, a first titanium nitride layer located over the titanium silicide layer, a titanium oxynitride layer contacting the first titanium nitride layer, a second titanium nitride layer contacting the titanium oxynitride layer, and a metal fill layer located over the second titanium nitride layer.

公开(公告)号：US20180247954A1

公开(公告)日：2018-08-30

申请号：US15617499

申请日：2017-06-08

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Fumitaka Amano ,  Kensuke Ishikawa ,  Shinya Inoue ,  Michiaki Sano

IPC: H01L27/11582 ,  H01L23/532 ,  H01L29/45 ,  H01L27/11556 ,  H01L23/522 ,  H01L21/768 ,  H01L21/02 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11519 ,  H01L27/11565

CPC classification number: H01L27/11582 ,  H01L21/02186 ,  H01L21/28518 ,  H01L21/76802 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76877 ,  H01L21/76889 ,  H01L23/5226 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L29/456 ,  H01L29/665

Abstract: A semiconductor device includes a silicon surface, a titanium silicide layer contacting the silicon surface, a first titanium nitride layer located over the titanium silicide layer, a titanium oxynitride layer contacting the first titanium nitride layer, a second titanium nitride layer contacting the titanium oxynitride layer, and a metal fill layer located over the second titanium nitride layer.