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公开(公告)号：US20170371755A1
公开(公告)日：2017-12-28
申请号：US15191150
申请日：2016-06-23
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Nian Niles Yang , Jiahui Yuan , Grishma Shah , Xinde Hu , Lanlan Gu , Bin Wu
CPC classification number: G06F11/2094 , G06F2201/805 , G06F2201/82 , G11C8/08 , G11C8/14 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/3495 , G11C29/025 , G11C2029/1202
Abstract: A non-volatile memory system includes a plurality of non-volatile data memory cells arranged into groups of data memory cells, a plurality of select devices connected to the groups of data memory cells, a selection line connected to the select devices, a plurality of data word lines connected to the data memory cells, and one or more control circuits connected to the selection line and the data word lines. The one or more control circuits are configured to determine whether the select devices are corrupted. If the select devices are corrupted, then the one or more control circuits repurpose one of the word lines (e.g., the first data word line closet to the select devices) to be another selection line, thus operating the memory cells connected to the repurposed word line as select devices.
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公开(公告)号：US10116336B2
公开(公告)日：2018-10-30
申请号：US14304277
申请日：2014-06-13
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Xinde Hu , Manuel Antonio D'Abreu
Abstract: A data storage device includes a non-volatile memory and a controller operationally coupled to the non-volatile memory. The controller is configured to access information stored at the non-volatile memory. The information includes a user data portion and an error correcting code (ECC) portion corresponding to the user data portion. The controller is further configured to modify the ECC portion in response to an error rate associated with the information exceeding a threshold. The one or more ECC parameters are modified without erasing or re-programming the user data portion.
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公开(公告)号：US09910749B2
公开(公告)日：2018-03-06
申请号：US15191150
申请日：2016-06-23
Applicant: SANDISK TECHNOLOGIES LLC
Inventor： Nian Niles Yang , Jiahui Yuan , Grishma Shah , Xinde Hu , Lanlan Gu , Bin Wu
CPC classification number: G06F11/2094 , G06F2201/805 , G06F2201/82 , G11C8/08 , G11C8/14 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/16 , G11C16/3495 , G11C29/025 , G11C2029/1202
Abstract: A non-volatile memory system includes a plurality of non-volatile data memory cells arranged into groups of data memory cells, a plurality of select devices connected to the groups of data memory cells, a selection line connected to the select devices, a plurality of data word lines connected to the data memory cells, and one or more control circuits connected to the selection line and the data word lines. The one or more control circuits are configured to determine whether the select devices are corrupted. If the select devices are corrupted, then the one or more control circuits repurpose one of the word lines (e.g., the first data word line closet to the select devices) to be another selection line, thus operating the memory cells connected to the repurposed word line as select devices.
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