公开(公告)号：US10026782B2

公开(公告)日：2018-07-17

申请号：US15633054

申请日：2017-06-26

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yoichiro Tanaka ,  Yangyin Chen ,  Chu-Chen Fu ,  Christopher Petti

IPC: H01L47/00 ,  H01L27/24 ,  H01L45/00 ,  G11C13/00

Abstract: Systems and methods for improving performance of a non-volatile memory that utilizes a Vacancy Modulated Conductive Oxide (VMCO) structure are described. The VMCO structure may include a layer of amorphous silicon (e.g., a Si barrier layer) and a layer titanium oxide (e.g., a TiO2 switching layer). In some cases, the VMCO structure or VMCO stack may use bulk switching or switching O-ion movements across an area of the VMCO structure, as opposed to switching locally in a constriction of vacancy formed filamentary path. A VMCO structure may be partially or fully embedded within a word line layer of a memory array.

公开(公告)号：US10290680B2

公开(公告)日：2019-05-14

申请号：US14928999

申请日：2015-10-30

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yoichiro Tanaka

IPC: H01L47/00 ,  H01L27/24 ,  H01L45/00

Abstract: Methods for improving the operation of a memory array by arranging a Metal-Insulator-Metal (MIM) structure between a word line and an adjustable resistance bit line structure are described. The MIM structure may correspond with a metal/ReRAM material/metal structure that is arranged between the word line and an intrinsic polysilicon region of the adjustable resistance bit line structure. In one example, a word line (e.g., TiN) may be arranged adjacent to a ReRAM material (e.g., HfOx) that is adjacent to a first metal (e.g., TiN) that is adjacent to the intrinsic polysilicon region. The first metal may comprise a metal, metal-nitride, or a metal-silicide. In another example, the word line may be arranged adjacent to a ReRAM material that is adjacent to a first metal (e.g., TiN) that is adjacent to a second metal different from the first metal (e.g., tungsten) that is adjacent to the intrinsic polysilicon region.

公开(公告)号：US20170309681A1

公开(公告)日：2017-10-26

申请号：US15633054

申请日：2017-06-26

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Yoichiro Tanaka ,  Yangyin Chen ,  Chu-Chen Fu ,  Christopher Petti

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

CPC classification number: H01L27/249 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/0038 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/32 ,  G11C2213/51 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/79 ,  H01L23/528 ,  H01L23/53257 ,  H01L27/1214 ,  H01L27/2427 ,  H01L27/2481 ,  H01L29/78642 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1683

Abstract: Systems and methods for improving performance of a non-volatile memory that utilizes a Vacancy Modulated Conductive Oxide (VMCO) structure are described. The VMCO structure may include a layer of amorphous silicon (e.g., a Si barrier layer) and a layer titanium oxide (e.g., a TiO2 switching layer). In some cases, the VMCO structure or VMCO stack may use bulk switching or switching O-ion movements across an area of the VMCO structure, as opposed to switching locally in a constriction of vacancy formed filamentary path. A VMCO structure may be partially or fully embedded within a word line layer of a memory array.