Bonded Article of Thin Glass on Support Substrate, Preparation Method and Use Thereof
    4.
    发明申请
    Bonded Article of Thin Glass on Support Substrate, Preparation Method and Use Thereof 审中-公开
    薄玻璃保护底物的制备方法及用途

    公开(公告)号:US20160114565A1

    公开(公告)日:2016-04-28

    申请号:US14975900

    申请日:2015-12-21

    摘要: A method for making a bonded article, wherein a thin glass substrate is bonded on a support substrate in the absence of any interlayer by an electrostatic adhesion process with the assistance of external pressure, the pressure is applied constantly or stepwise during the adhesion process by use of a tool such as a roll or a wheel or other movable device with curved surface. The bonded article has no defects, e.g. bubbles or inclusions, in the bonded interface, which benefits transportation of the thin glass substrate and its post-processing as well. Such defect-free bonded article is also disclosed. Pressure supported electrostatic adhesion, initiated by electrostatic charges adhesion of a two members, e.g. a substrate member and a support member, is enabled to minimize, prevent and exclude defects, distortion between the adhered surfaces.

    摘要翻译: 一种接合制品的制造方法,其中在外部辅助的情况下,通过静电粘附工艺在不存在任何夹层的情况下将薄玻璃基板粘结在支撑基板上,通过使用在粘合过程中不断地或逐步地施加压力 诸如辊或车轮的工具或具有弯曲表面的其它可移动装置。 粘合制品没有缺陷,例如 粘结界面中的气泡或夹杂物,这有利于薄玻璃基板的输送及其后处理。 还公开了这种无缺陷的粘合制品。 由两个构件的静电电荷附着引起的压力支持的静电粘附,例如。 衬底构件和支撑构件能够最小化,防止和排除缺陷,粘附表面之间的变形。

    LOW CTE BORO-ALUMINOSILICATE GLASS FOR GLASS CARRIER WAFERS

    公开(公告)号:US20180339932A1

    公开(公告)日:2018-11-29

    申请号:US16052185

    申请日:2018-08-01

    IPC分类号: C03C3/091 C03C4/00

    摘要: A low CTE boro-aluminosilicate glass having a low brittleness for use in wafer-level-packaging (WLP) applications is disclosed. The glass comprises a composition in mol-% of SiO2: 60-85, Al2O3: 1-17, B2O3: 8-20, Na2O: 0-5, K2O: 0-5, MgO: 0-10, CaO: 0-10, SrO: 0-10, and BaO: 0-10. An average number of non-bridging oxygen per polyhedron (NBO) is equal to or larger than −0.2 and a ratio B2O3/Al2O3 is equal to or larger than 0.5. The NBO is defined as NBO=2×Omol/(Simol+Almol+Bmol)−4. A glass carrier wafer made from the low CTE boro-aluminosilicate glass and a use thereof as a glass carrier wafer for the processing of a silicon substrate are also disclosed, as well as a method for providing a low CTE boro-aluminosilicate glass.

    Low CTE boro-aluminosilicate glass for glass carrier wafers

    公开(公告)号:US11059738B2

    公开(公告)日:2021-07-13

    申请号:US16052185

    申请日:2018-08-01

    IPC分类号: C03C3/091 C03C4/00 C03C27/00

    摘要: A low CTE boro-aluminosilicate glass having a low brittleness for use in wafer-level-packaging (WLP) applications is disclosed. The glass comprises a composition in mol-% of SiO2: 60-85, Al2O3: 1-17, B2O3: 8-20, Na2O: 0-5, K2O: 0-5, MgO: 0-10, CaO: 0-10, SrO: 0-10, and BaO: 0-10. An average number of non-bridging oxygen per polyhedron (NBO) is equal to or larger than −0.2 and a ratio B2O3/Al2O3 is equal to or larger than 0.5. The NBO is defined as NBO=2×Omol/(Simol+Almol+Bmol)−4. A glass carrier wafer made from the low CTE boro-aluminosilicate glass and a use thereof as a glass carrier wafer for the processing of a silicon substrate are also disclosed, as well as a method for providing a low CTE boro-aluminosilicate glass.