-
公开(公告)号：US10446397B2
公开(公告)日：2019-10-15
申请号：US15297213
申请日：2016-10-19
发明人： Takayuki Aoyama , Hikaru Kawarazaki
IPC分类号： H01L21/225 , H01L21/324 , H01L21/67 , H01L21/268 , H01L29/16 , H01J61/54 , H05B41/34 , H01L29/78
摘要： When an insulated gate bipolar transistor is incorporated in a drive circuit of a flash lamp, so that a light emission pattern of the flash lamp is freely defined, a temperature change pattern of a surface of a semiconductor wafer that receives the emission of flash light can be adjusted. The length of diffusion of impurities can be controlled by rising a surface temperature of the semiconductor wafer from a preheating temperature to a diffusion temperature through emission of flash light and maintaining the surface temperature at the diffusion temperature for a time period not shorter than 1 millisecond and not longer than 10 milliseconds. Subsequently, the impurities can be activated by rising the surface temperature of the semiconductor wafer from the diffusion temperature to an activation temperature.
-
公开(公告)号：US10028336B2
公开(公告)日：2018-07-17
申请号：US15679911
申请日：2017-08-17
发明人： Takayuki Aoyama , Shinichi Kato
IPC分类号： H01L21/67 , H05B3/00 , H01L21/768 , H01L21/687 , H01L21/285 , H01L21/04
摘要： Flash light is emitted from flash lamps to the surface of a semiconductor substrate on which a metal layer has been formed for one second or less to momentarily raise temperature on the surface of the semiconductor substrate including the metal layer and an impurity region to a processing temperature of 1000° C. or more. Heat treatment is performed by emitting flash light to the surface of the semiconductor substrate in a forming gas atmosphere containing hydrogen. By heating the surface of the semiconductor substrate to a high temperature in the forming gas atmosphere for an extremely short time period, contact resistance can be reduced without desorbing hydrogen taken in the vicinity of an interface of a gate oxide film for hydrogen termination.
-
公开(公告)号：US11621178B2
公开(公告)日：2023-04-04
申请号：US16256760
申请日：2019-01-24
发明人： Takayuki Aoyama , Akitsugu Ueda , Mao Omori , Kazunori Amago
IPC分类号： H01L21/67 , H01L21/677 , C23C16/48 , C23C16/44 , C23C16/52 , H01L21/687 , H05B3/00
摘要： When pressure in a chamber is brought to atmospheric pressure and the chamber is filled with an inert gas atmosphere, the atmosphere in the chamber is sucked into an oxygen concentration analyzer through a sampling line such that oxygen concentration in the chamber is measured by the oxygen concentration analyzer. When the pressure in the chamber is reduced to less than atmospheric pressure, nitrogen gas is supplied to the oxygen concentration analyzer through an inert gas supply line simultaneously with suspending the measurement of oxygen concentration in the chamber. Even when the measurement of oxygen concentration in the chamber is suspended, reverse flow to the oxygen concentration analyzer from a gas exhaust pipe can be prevented, and the oxygen concentration analyzer can be prevented from being exposed to exhaust from the chamber. The configuration results in maintaining measurement accuracy of the oxygen concentration analyzer in a low oxygen concentration range.
-
公开(公告)号：US11574824B2
公开(公告)日：2023-02-07
申请号：US16312872
申请日：2017-04-04
发明人： Takayuki Aoyama , Shinichi Kato , Kazuhiko Fuse , Hikaru Kawarazaki , Masashi Furukawa , Hideaki Tanimura , Akitsugu Ueda
IPC分类号： H01L21/67 , H01L21/02 , H01L29/78 , H01L21/265 , C23C16/44 , C23C16/455 , C23C16/48 , H01L21/263
摘要： A semiconductor wafer to be treated is heated at a first preheating temperature ranging from 100 to 200° C. while a pressure in a chamber housing the semiconductor wafer is reduced to a pressure lower than an atmospheric pressure. After the semiconductor wafer is preheated to increase the temperature into a second preheating temperature ranging from 500 to 700° C. while the pressure in the chamber is restored to a pressure higher than the reduced pressure, a flash lamp emits a flashlight to a surface of the semiconductor wafer. Heating the semiconductor wafer at the first preheating temperature that is a relatively low temperature enables, for example, the moisture absorbed on the surface of the semiconductor wafer in trace amounts to be desorbed from the surface, and also enables the flash heating treatment to be performed with oxygen derived from such absorption removed as much as possible.
-
5.发明授权公开(公告)号：US10886132B2
公开(公告)日：2021-01-05
申请号：US16459067
申请日：2019-07-01
发明人： Takayuki Aoyama
IPC分类号： H01L21/28 , H01L21/67 , H01L29/51 , H01L21/687 , H01L21/677 , H01L29/78
摘要： A semiconductor wafer serving as a treatment target has a stack structure in which a high-dielectric-constant gate insulating film is formed on a silicon base material with an interface layer film of silicon dioxide sandwiched therebetween, and a metal gate electrode containing fluorine is further formed thereon. A heat treatment apparatus radiates flash light from a flash lamp to the semiconductor wafer in an atmosphere containing hydrogen to carry out heating treatment for an extremely short period of time of 100 milliseconds or less. As a result, diffusion of nitrogen contained in the metal gate electrode is inhibited, at the same time, only the fluorine is diffused from the high-dielectric-constant gate insulating film to an interface between the interface layer film and the silicon base material to reduce an interface state, and reliability of the gate stack structure can be improved.
-
公开(公告)号：US11516884B2
公开(公告)日：2022-11-29
申请号：US16699812
申请日：2019-12-02
摘要： A carrier containing a plurality of semiconductor wafers in a lot is transported into a heat treatment apparatus. Thereafter, a recipe specifying treatment procedures and treatment conditions is set for each of the semiconductor wafers. Next, a reflectance of each of the semiconductor wafers stored in the carrier is measured. Based on the set recipe and the measured reflectance of each semiconductor wafer, a predicted attainable temperature of each semiconductor wafer at the time of flash heating treatment is calculated, and the calculated predicted attainable temperature is displayed. This allows the setting of the treatment conditions with reference to the displayed predicted attainable temperature, to thereby easily achieve the setting of the heat treatment conditions.
-
公开(公告)号：US10580667B2
公开(公告)日：2020-03-03
申请号：US15638068
申请日：2017-06-29
发明人： Takayuki Aoyama , Yasuaki Kondo , Shinji Miyawaki , Shinichi Kato , Kazuhiko Fuse , Hideaki Tanimura , Akitsugu Ueda , Hikaru Kawarazaki , Masashi Furukawa
IPC分类号： H01L21/67 , H01L21/762 , H01L21/677 , H01L21/02
摘要： A heat treatment apparatus is provided with two cool chambers, that is, a first cool chamber and a second cool chamber. A semiconductor wafer before treatment is alternately carried into the first cool chamber or the second cool chamber and then transported to a heat treatment part by a transport robot after a nitrogen purge is performed. The semiconductor wafer after being heat-treated in the heat treatment part is alternately transported to the first cool chamber or the second cool chamber to be cooled. A sufficient cooling time is secured for the independent semiconductor wafer, and a reduction in throughput as the whole heat treatment apparatus can be suppressed.
-
公开(公告)号：US11335574B2
公开(公告)日：2022-05-17
申请号：US16544470
申请日：2019-08-19
发明人： Takayuki Aoyama
IPC分类号： H01L21/67 , H01L21/324 , H01L21/66
摘要： From a stage of preheating by a halogen lamp to irradiation with a flash by a flash lamp, a radiation thermometer is used for measuring the temperature of a back surface of a semiconductor wafer. A increased temperature ΔT is determined by which the back surface of the semiconductor wafer is increased in temperature from the preheating temperature by irradiation with a flash. The specific heat of the semiconductor wafer has a known value. Further, the increased temperature ΔT is proportionate to the magnitude of energy applied to a front surface of the semiconductor wafer by irradiation with a flash. Thus, a front surface attained temperature of the semiconductor wafer can be determined using the increased temperature ΔT of the back surface of the semiconductor wafer during irradiation with a flash.
-
公开(公告)号：US10985021B2
公开(公告)日：2021-04-20
申请号：US16519558
申请日：2019-07-23
IPC分类号： H01L21/324 , H01L21/265 , H01L21/687
摘要： A gallium nitride (GaN) substrate is injected with magnesium as a p-type dopant. The GaN substrate undergoes preheating through irradiation with light from halogen lamps in an atmosphere containing nitrogen and hydrogen, and further undergoes heating to a high temperature for a super-short time through irradiation with flashes of light from flash lamps. Heating the GaN substrate in the atmosphere containing nitrogen and hydrogen complements removed nitrogen, thus preventing nitrogen shortage. Such a heating process also enables heat treatment while supplying hydrogen to the GaN substrate. The heating process further enables crystal defects in the GaN substrate to be recovered. With these effects, the p-type dopant injected into the GaN substrate is activated with high efficiency.
-
公开(公告)号：US10978319B2
公开(公告)日：2021-04-13
申请号：US16144075
申请日：2018-09-27
发明人： Takayuki Aoyama , Hikaru Kawarazaki , Masashi Furukawa , Shinichi Kato , Kazuhiko Fuse , Hideaki Tanimura
IPC分类号： H01L21/324 , H01L21/67 , H01L21/28 , H01L21/263 , H01L21/02 , C23C16/44 , C23C16/48 , C23C16/455
摘要： Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.
-
-
-
-
-
-
-
-
-
搜索结果
18 条记录 (耗时 0.015 秒)
