LIGHT-IRRADIATION HEAT TREATMENT APPARATUS

    公开(公告)号:US20210274598A1

    公开(公告)日:2021-09-02

    申请号:US17325906

    申请日:2021-05-20

    Abstract: A semiconductor wafer held by a holding part in a chamber is irradiated and heated with halogen light emitted from a plurality of halogen lamps. A cylindrical louver and an annular light-shielding member, both made of opaque quartz, are provided between the halogen lamps and the semiconductor wafer. The outer diameter of the light-shielding member is smaller than the inner diameter of the louver. Light emitted from the halogen lamps and passing through a clearance between the inner wall surface of the louver and the outer circumference of the light-shielding member is applied to a peripheral portion of the semiconductor wafer where a temperature drop is likely to occur. On the other hand, light travelling toward an overheat region that has a higher temperature than the other region and appears in the surface of the semiconductor wafer when only a louver is installed is blocked off by the light-shielding member.

    LIGHT-IRRADIATION THERMAL TREATMENT APPARATUS

    公开(公告)号:US20210159099A1

    公开(公告)日:2021-05-27

    申请号:US17167121

    申请日:2021-02-04

    Abstract: A ring support is attached to an inner wall surface of a chamber that houses a semiconductor wafer to support a susceptor. When the semiconductor wafer is placed on the susceptor, an inner space of the chamber is separated into an upper space and a lower space. Particles are likely to accumulate on a lower chamber window as a floor part of the chamber. However, since the upper space and the lower space are separated, the semiconductor wafer can be prevented from being contaminated by the particles flowing into the upper space and adhering to a surface of the semiconductor wafer even when the particles on the lower chamber window are blown up by irradiation with flash light.

    LIGHT-IRRADIATION HEAT TREATMENT APPARATUS
    3.
    发明申请
    LIGHT-IRRADIATION HEAT TREATMENT APPARATUS 审中-公开
    光辐射热处理设备

    公开(公告)号:US20160262207A1

    公开(公告)日:2016-09-08

    申请号:US15049286

    申请日:2016-02-22

    CPC classification number: H05B3/0047 F27B17/0025 F27D11/12 H01L21/67115

    Abstract: A semiconductor wafer held by a holding part in a chamber is irradiated and heated with halogen light emitted from a plurality of halogen lamps. A cylindrical louver and an annular light-shielding member, both made of opaque quartz, are provided between the halogen lamps and the semiconductor wafer. The outer diameter of the light-shielding member is smaller than the inner diameter of the louver. Light emitted from the halogen lamps and passing through a clearance between the inner wall surface of the louver and the outer circumference of the light-shielding member is applied to a peripheral portion of the semiconductor wafer where a temperature drop is likely to occur. On the other hand, light travelling toward an overheat region that has a higher temperature than the other region and appears in the surface of the semiconductor wafer when only a louver is installed is blocked off by the light-shielding member.

    Abstract translation: 用从多个卤素灯发出的卤素灯照射并保持由室中的保持部保持的半导体晶片。 在卤素灯和半导体晶片之间设置由透明石英制成的圆柱形百叶窗和环形遮光构件。 遮光构件的外径小于百叶窗的内径。 从卤素灯发出并通过百叶窗的内壁表面和遮光构件的外周之间的间隙的光被施加到可能发生温度下降的半导体晶片的周边部分。 另一方面,当仅安装百叶窗时,朝向温度比其他区域高的温度并且出现在半导体晶片的表面中的光被遮光构件阻挡。

    HEAT TREATMENT APPARATUS
    4.
    发明公开

    公开(公告)号:US20230207348A1

    公开(公告)日:2023-06-29

    申请号:US17926642

    申请日:2021-05-25

    Abstract: A plurality of substrate support pins are erected on a susceptor that holds a semiconductor wafer that is an object being treated. The plurality of substrate support pins are set in a ring shape at equal intervals. A flash lamp irradiates the semiconductor wafer supported by the plurality of substrate support pins with flash light to heat the semiconductor wafer. The radius of a setting circle in which the plurality of substrate support pins are set is made larger as the pulse width of flash light emitted from the flash lamp decreases. To irradiate the semiconductor wafer with flash light while having the semiconductor wafer supported by the plurality of substrate support pins can prevent cracking of the semiconductor wafer despite possible abrupt deformation of the semiconductor wafer due to the flash-light irradiation.

    LIGHT-IRRADIATION HEAT TREATMENT APPARATUS
    5.
    发明申请

    公开(公告)号:US20170243770A1

    公开(公告)日:2017-08-24

    申请号:US15410999

    申请日:2017-01-20

    CPC classification number: H01L21/67115 H01L21/67248 H05B3/0047

    Abstract: A semiconductor wafer held by a holder within a chamber is irradiated and heated with halogen light emitted from multiple halogen lamps. Cylindrical outer and inner louvers made of opaque quartz are provided between the halogen lamps and the semiconductor wafer. A reflector is provided in an area of tube walls of the halogen lamps that faces the spacing between the inner wall surface of the outer louver and the outer wall surface of the inner louver. The spacing between the two louvers is located immediately below and faces the peripheral portion of the semiconductor wafer. Thus, the illuminance of light that reaches the peripheral portion of the semiconductor wafer where a temperature drop is likely to occur will be higher than the illuminance of light that travels toward the central portion from the halogen lamps. This configuration will help make uniform the in-plane temperature distribution of the semiconductor wafer.

    LIGHT-IRRADIATION HEAT TREATMENT APPARATUS
    8.
    发明申请

    公开(公告)号:US20170243771A1

    公开(公告)日:2017-08-24

    申请号:US15420134

    申请日:2017-01-31

    Inventor: Makoto ABE

    CPC classification number: H01L21/67115 H05B3/0047

    Abstract: A semiconductor wafer held by a holder within a chamber is irradiated and heated with halogen light emitted from multiple halogen lamps. A cylindrical louver made of opaque quartz and a light-shielding member of a ring shape having a cut-out portion are provided between the halogen lamps and the semiconductor wafer. When the semiconductor wafer is heated with the light emitted from the halogen lamps, a shadow region will appear in the semiconductor wafer as a result of the louver blocking off the emitted light. However, in the presence of the cut-out portion of the light-shielding member, the light emitted from the halogen lamps will reach the shadow region through the cut-out portion. This configuration allows the shadow region to be heated in the same manner as the other regions, and accordingly will help make uniform the in-plane temperature distribution of the semiconductor wafer during light irradiation heating.

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