公开(公告)号：US20190164789A1

公开(公告)日：2019-05-30

申请号：US16312872

申请日：2017-04-04

Applicant: SCREEN HOLDINGS CO., LTD.

Inventor： Takayuki AOYAMA ,  Shinichi KATO ,  Kazuhiko FUSE ,  Hikaru KAWARAZAKI ,  Masashi FURUKAWA ,  Hideaki TANIMURA ,  Akitsugu UEDA

IPC: H01L21/67 ,  C23C16/44 ,  C23C16/48 ,  C23C16/455 ,  H01L21/263 ,  H01L21/02

Abstract: A semiconductor wafer to be treated is heated at a first preheating temperature ranging from 100 to 200° C. while a pressure in a chamber housing the semiconductor wafer is reduced to a pressure lower than an atmospheric pressure. After the semiconductor wafer is preheated to increase the temperature into a second preheating temperature ranging from 500 to 700° C. while the pressure in the chamber is restored to a pressure higher than the reduced pressure, a flash lamp emits a flashlight to a surface of the semiconductor wafer. Heating the semiconductor wafer at the first preheating temperature that is a relatively low temperature enables, for example, the moisture absorbed on the surface of the semiconductor wafer in trace amounts to be desorbed from the surface, and also enables the flash heating treatment to be performed with oxygen derived from such absorption removed as much as possible.

公开(公告)号：US20170309489A1

公开(公告)日：2017-10-26

申请号：US15648634

申请日：2017-07-13

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Takayuki AOYAMA ,  Hikaru KAWARAZAKI ,  Masashi FURUKAWA ,  Kazuhiko FUSE ,  Hideaki TANIMURA ,  Shinichi KATO

IPC: H01L21/285 ,  H01L21/67 ,  H01L21/268 ,  H01L21/265

CPC classification number: H01L21/28518 ,  H01L21/265 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68707

Abstract: A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the chamber is reduced to a pressure lower than atmospheric pressure. Thereafter, nitrogen gas is supplied into the chamber to return the pressure in the chamber to ordinary pressure, and the front surface of the semiconductor wafer is irradiated with a flash of light, so that a silicide that is a compound of the metal film and silicon is formed. The oxygen concentration in the chamber is significantly lowered during the formation of the silicide because the pressure in the chamber is reduced once to the pressure lower than atmospheric pressure and then returned to the ordinary pressure. This suppresses the increase in resistance of the silicide resulting from the entry of oxygen in the atmosphere in the chamber into defects near the interface between the metal film and a base material.

公开(公告)号：US20210274598A1

公开(公告)日：2021-09-02

申请号：US17325906

申请日：2021-05-20

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Makoto ABE ,  Hikaru KAWARAZAKI ,  Hideaki TANIMURA ,  Masashi FURUKAWA

IPC: H05B3/00 ,  F27D11/12 ,  F27B17/00 ,  H01L21/67

Abstract: A semiconductor wafer held by a holding part in a chamber is irradiated and heated with halogen light emitted from a plurality of halogen lamps. A cylindrical louver and an annular light-shielding member, both made of opaque quartz, are provided between the halogen lamps and the semiconductor wafer. The outer diameter of the light-shielding member is smaller than the inner diameter of the louver. Light emitted from the halogen lamps and passing through a clearance between the inner wall surface of the louver and the outer circumference of the light-shielding member is applied to a peripheral portion of the semiconductor wafer where a temperature drop is likely to occur. On the other hand, light travelling toward an overheat region that has a higher temperature than the other region and appears in the surface of the semiconductor wafer when only a louver is installed is blocked off by the light-shielding member.

公开(公告)号：US20180068847A1

公开(公告)日：2018-03-08

申请号：US15798743

申请日：2017-10-31

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Hikaru KAWARAZAKI

IPC: H01L21/02

CPC classification number: H01L21/02345 ,  F27B17/0025 ,  F27D11/00 ,  H01L21/02247 ,  H01L21/02255 ,  H01L21/02329

Abstract: A substrate in which a high-dielectric-constant gate insulator is formed on a silicon substrate with an interface layer film sandwiched in between is housed in a chamber. The method of the invention including: (a) housing the substrate in a chamber; (b) supplying ammonia to the chamber to foam an ammonia atmosphere; and (c) applying flash light to a surface of the substrate housed in the chamber to heat the high dielectric constant film, wherein the flash light applied in said step (c) has a spectral distribution that has a peak in a wavelength range of 200 to 300 nm.

公开(公告)号：US20160195333A1

公开(公告)日：2016-07-07

申请号：US14975992

申请日：2015-12-21

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Hikaru KAWARAZAKI

IPC: F27B17/00 ,  F27D11/00 ,  H01L21/02

CPC classification number: H01L21/02345 ,  F27B17/0025 ,  F27D11/00 ,  H01L21/02247 ,  H01L21/02255 ,  H01L21/02329

Abstract: A substrate in which a high-dielectric-constant gate insulator is formed on a silicon substrate with an interface layer film sandwiched in between is housed in a chamber. A mixed gas of ammonia and nitrogen gas is supplied to the chamber to form an ammonia atmosphere, and flash light is applied in the ammonia atmosphere from flash lamps to the surface of the substrate for an emission time of 0.2 milliseconds to one second. This allows the high-dielectric-constant gate insulator to be heated in the ammonia atmosphere and accelerates nitriding of the high-dielectric-constant gate insulator. Since the time for which flash light is applied is an extremely short time, nitrogen will not reach and nitride the interface layer film, which is formed as a base of the high-dielectric-constant gate insulator.

Abstract translation: 在其中在夹在其间的界面层膜的硅衬底上形成高介电常数栅极绝缘体的衬底被容纳在腔室中。 将氨和氮气的混合气体供应到室中以形成氨气氛，并且在氨气氛中将闪光从闪光灯施加到基板的表面，发射时间为0.2毫秒至1秒。 这允许高介电常数栅极绝缘体在氨气氛中加热并加速高介电常数栅极绝缘体的氮化。 由于施加闪光的时间是非常短的时间，所以氮不会达到并且氮化形成为高介电常数栅极绝缘体的基极的界面层膜。

公开(公告)号：US20230274959A1

公开(公告)日：2023-08-31

申请号：US18074117

申请日：2022-12-02

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Takahiro KITAZAWA ,  Hikaru KAWARAZAKI

IPC: H01L21/67 ,  G01J5/00

CPC classification number: H01L21/67248 ,  G01J5/0007 ,  H01L21/67115

Abstract: A temperature measurement method includes: a radiation temperature measurement step for detecting a brightness temperature of a semiconductor wafer from obliquely below the semiconductor wafer; an input parameter calculation step for calculating at least two input parameters from the brightness temperature detected in the radiation temperature measurement step, the at least two input parameters including a first input parameter corresponding to an emissivity ratio of the semiconductor wafer and a second input parameter corresponding to a temperature of the semiconductor wafer; an output parameter estimation step for estimating an output parameter from the first input parameter and the second input parameter; and a temperature calculation step for calculating the temperature of the semiconductor wafer from the output parameter estimated in the output parameter estimation step and the brightness temperature detected in the radiation temperature measurement step.

公开(公告)号：US20210043477A1

公开(公告)日：2021-02-11

申请号：US16901217

申请日：2020-06-15

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Hikaru KAWARAZAKI ,  Yoshihide NOZAKI

IPC: H01L21/67 ,  H01L21/66

Abstract: A semiconductor wafer is heated by a flash of light emitted from a flash lamp after being preheated by a halogen lamp. Temperature of the semiconductor wafer immediately before the flash of light is emitted is measured by a lower radiation thermometer. At the time of irradiation with a flash of light, an upper radiation thermometer measures temperature increase of a front surface of the semiconductor wafer. Front surface temperature of the semiconductor wafer is calculated by adding the temperature increase of the front surface of the semiconductor wafer at the time of irradiation with a flash of light measured by the upper radiation thermometer to the back surface temperature of the semiconductor wafer measured by the lower radiation thermometer.

公开(公告)号：US20190027385A1

公开(公告)日：2019-01-24

申请号：US16144075

申请日：2018-09-27

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Takayuki AOYAMA ,  Hikaru KAWARAZAKI ,  Masashi FURUKAWA ,  Shinichi KATO ,  Kazuhiko FUSE ,  Hideaki TANIMURA

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/02 ,  H01L21/28 ,  H01L21/263

Abstract: Over a front surface of a silicon semiconductor wafer is deposited a high dielectric constant film with a silicon oxide film, serving as an interface layer, provided between the semiconductor wafer and the high dielectric constant film. After a chamber houses the semiconductor wafer, a chamber's pressure is reduced to be lower than atmospheric pressure. Subsequently, a gaseous mixture of ammonia and nitrogen gas is supplied into the chamber to return the pressure to ordinary pressure, and the front surface is irradiated with a flash light, thereby performing post deposition annealing (PDA) on the high dielectric constant film. Since the pressure is reduced once to be lower than atmospheric pressure and then returned to ordinary pressure, a chamber's oxygen concentration is lowered remarkably during the PDA. This restricts an increase in thickness of the silicon oxide film underlying the high dielectric constant film by oxygen taken in during the PDA.

公开(公告)号：US20170117152A1

公开(公告)日：2017-04-27

申请号：US15297213

申请日：2016-10-19

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Takayuki AOYAMA ,  Hikaru KAWARAZAKI

IPC: H01L21/225 ,  H01L21/67 ,  H01L29/16 ,  H01L21/324

Abstract: When an insulated gate bipolar transistor is incorporated in a drive circuit of a flash lamp, so that a light emission pattern of the flash lamp is freely defined, a temperature change pattern of a surface of a semiconductor wafer that receives the emission of flash light can be adjusted. The length of diffusion of impurities can be controlled by rising a surface temperature of the semiconductor wafer from a preheating temperature to a diffusion temperature through emission of flash light and maintaining the surface temperature at the diffusion temperature for a time period not shorter than 1 millisecond and not longer than 10 milliseconds. Subsequently, the impurities can be activated by rising the surface temperature of the semiconductor wafer from the diffusion temperature to an activation temperature.

公开(公告)号：US20240038544A1

公开(公告)日：2024-02-01

申请号：US18361328

申请日：2023-07-28

Applicant: SCREEN Holdings Co., Ltd.

Inventor： Hikaru KAWARAZAKI

IPC: H01L21/3213

CPC classification number: H01L21/32134

Abstract: A substrate processing method includes a first oxidation step of heating a substrate at a first temperature by irradiation of light of a first intensity while supplying an oxygen gas or an ozone gas to the substrate, a first etching step of supplying an etching liquid to the substrate to make a surface layer of a molybdenum film that changed to molybdenum trioxide dissolve in the etching liquid, a second oxidation step of heating the substrate at a second temperature by irradiation of light of a second intensity while supplying the oxygen gas or the ozone gas to the substrate, and a second etching step of supplying the etching liquid to the substrate to make the surface layer of the molybdenum film that changed to the molybdenum trioxide dissolve in the etching liquid.