Abstract:
A method for nano-patterning includes imprinting features in a resist with an imprint mold to form one or more topographic surface patterns on the imprinted resist. A block copolymer (“BCP”) material is deposited on the imprinted resist, wherein a molecular dimension L0 of the BCP material correlates by an integer multiple to a spacing dimension of the one or more topographic surface patterns on the imprinted resist. The deposited BCP is annealed and at least a portion of the annealed BCP is removed, forming a template having discrete domains.
Abstract:
The embodiments disclose a method of protecting patterned magnetic materials of a stack, including depositing a thin continuous film of an inert material that is inert to the magnetic materials of a patterned stack upon which the thin continuous film is being deposited and forming a thin interim interface layer from the thin continuous film to protect top and sidewall areas of non-etched higher relief magnetic islands and magnetic film etched surfaces of the patterned stack from air exposure damage and damage from contact with backfilled materials.
Abstract:
A method for nano-patterning includes imprinting features in a resist with an imprint mold to form one or more topographic surface patterns on the imprinted resist. A block copolymer (“BCP”) material is deposited on the imprinted resist, wherein a molecular dimension L0 of the BCP material correlates by an integer multiple to a spacing dimension of the one or more topographic surface patterns on the imprinted resist. The deposited BCP is annealed and at least a portion of the annealed BCP is removed, forming a template having discrete domains.