公开(公告)号：US09809887B2

公开(公告)日：2017-11-07

申请号：US15052701

申请日：2016-02-24

Applicant: Seagate Technology LLC

Inventor： Michael R. Feldbaum ,  Justin Jia-Jen Hwu ,  David S. Kuo ,  Gennady Gauzner ,  Kim Yang Lee ,  Li-Ping Wang

IPC: C23F4/00 ,  B82Y40/00 ,  B82Y10/00 ,  G03F7/00 ,  G11B5/855

CPC classification number: C23F4/00 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G11B5/855 ,  Y10T428/265

Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.

公开(公告)号：US20160168723A1

公开(公告)日：2016-06-16

申请号：US15052701

申请日：2016-02-24

Applicant: Seagate Technology LLC

Inventor： Michael R. Feldbaum ,  Justin Jia-Jen Hwu ,  David S. Kuo ,  Gennady Gauzner ,  Kim Yang Lee ,  Li-Ping Wang

IPC: C23F4/00

CPC classification number: C23F4/00 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G11B5/855 ,  Y10T428/265

Abstract: The embodiments disclose a method of fabricating a stack, including replacing a metal layer of a stack imprint structure with an oxide layer, patterning the oxide layer stack using chemical etch processes to transfer the pattern image and cleaning etch residue from the stack imprint structure to substantially prevent contamination of the metal layers.

公开(公告)号：US20140308439A1

公开(公告)日：2014-10-16

申请号：US14315307

申请日：2014-06-25

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Zhaohui Fan ,  Yuan Xu ,  Justin Jia-Jen Hwu ,  Koichi Wago ,  David Shiao-Min Kuo

IPC: G11B5/84 ,  C23C16/513 ,  C23C16/455

CPC classification number: G11B5/8408 ,  C23C16/45525 ,  C23C16/513 ,  G11B5/855 ,  H01F41/32 ,  Y10T428/24802

Abstract: The embodiments disclose a method of protecting patterned magnetic materials of a stack, including depositing a thin continuous film of an inert material that is inert to the magnetic materials of a patterned stack upon which the thin continuous film is being deposited and forming a thin interim interface layer from the thin continuous film to protect top and sidewall areas of non-etched higher relief magnetic islands and magnetic film etched surfaces of the patterned stack from air exposure damage and damage from contact with backfilled materials.

Abstract translation: 这些实施方案公开了一种保护叠层的图案化磁性材料的方法，包括沉积惰性材料的薄连续薄膜，惰性材料对图案化叠层的磁性材料是惰性的，薄膜连续薄膜将沉积在其上并形成薄的临时界面 层，以保护未蚀刻的更高的浮雕磁岛的顶部和侧壁区域以及图案化叠层的磁性膜蚀刻表面从空气暴露损坏和与回填材料接触的损坏。