公开(公告)号：US20250096007A1

公开(公告)日：2025-03-20

申请号：US18882906

申请日：2024-09-12

Applicant: SEMES CO., LTD.

Inventor： Jae Seung YU ,  Sung Hun EOM ,  Hee Man AHN ,  Gyeong Won SONG ,  Gu Won SEON ,  Sol AN

IPC: H01L21/324 ,  G03F7/16 ,  H01L21/033

Abstract: A method of treating a substrate treats a substrate by using a substrate treating apparatus that includes a main supply line connected to a humidified gas supply line and a dry gas supply line, having a first region in which a first heater is installed, and a second region located downstream of the first region. The method includes a heating operation of heating the second region with the dry gas heated in the first region by supplying the dry gas into the main supply line in a state where the first heater is controlled to heat the first region; and a substrate treating operation of supplying the humidified gas into the main supply line after the heating operation and allowing the humidified gas to pass through the first region and the second region and to be supplied into the treatment space to treat the substrate disposed in the treatment space.

公开(公告)号：US20250135508A1

公开(公告)日：2025-05-01

申请号：US18927168

申请日：2024-10-25

Applicant: SEMES CO., LTD.

Inventor： Jin Kyu KIM ,  Hyeong Soo PARK ,  Gu Won SEON

IPC: B08B3/02 ,  B08B3/08 ,  B08B5/02 ,  B08B11/02

Abstract: Disclosed is an apparatus for treating a substrate, the apparatus including: a spin chuck for supporting a substrate and rotatable; a nozzle unit for supplying a cleaning solution and drying gas onto the substrate supported by the spin chuck; and a controller for controlling the nozzle unit, in which the nozzle unit includes: a head; a plurality of cleaning nozzles provided on the head and for discharging the cleaning solution; a plurality of drying nozzles provided on the head and for discharging the drying gas; and a driver for moving the head from a first position to a second position, when the head is in the second position, an impact point of the cleaning solution discharged from the plurality of cleaning nozzles onto the substrate is at a location farther from a center of the substrate than an impact point of the cleaning solution when the head is in the first position, the cleaning solution is discharged simultaneously from the plurality of cleaning nozzles, the impact points of the cleaning solution are located at different distances from the center of the substrate, when the drying gas is discharged simultaneously from the plurality of drying nozzles, the impact points of the drying gas are located at different distances from the center of the substrate, and when the cleaning solution and the drying gas are discharged simultaneously, the impact point of the cleaning solution is located farther from the center of the substrate than the impact point of the drying gas.

公开(公告)号：US20250062125A1

公开(公告)日：2025-02-20

申请号：US18792771

申请日：2024-08-02

Applicant: SEMES CO., LTD.

Inventor： Gyeong Won SONG ,  Hee Man AHN ,  Sung Hun EOM ,  Jae Seung YU ,  Gu Won SEON

IPC: H01L21/033 ,  H01L21/324 ,  H01L21/67

Abstract: Disclosed is a substrate processing method including: a substrate loading operation of loading a substrate into a processing space provided by a body; a heating operation of placing the substrate, which has been loaded into the processing space, on a heating chuck and heating the substrate; and an atmosphere changing operation of changing an atmosphere of the processing space, in which the atmosphere changing operation includes: a gas discharging operation of injecting atmosphere changing gas in a state where the substrate is located closer to a baffle than in the heating operation, in which the baffle is provided on a top side of the heating chuck to face the heating chuck and injects the atmosphere changing gas; and a substrate lowering operation of lowering and placing the substrate onto the heating chuck while maintaining the injection of the atmosphere changing gas.